云南高校图书馆联盟文献共享服务平台- PHOTODIODE

PHOTODIODE: 作品数：104被引量：102H指数：5; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：陈杰金湘亮仇玉林张欣张帅更多>>; 相关机构：中国科学院北京邮电大学中国科学院微电子研究所天津大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划中国博士后科学基金更多>>

A low-power high-quality CMOS image sensor using 1.5 V 4T pinned photodiode and dual-CDS column-parallel single-slope ADC: 《Journal of Semiconductors》2022年第8期53-59,共7页Wenjing Xu Jie Chen Zhangqu Kuang Li Zhou Ming Chen Chengbin Zhang; supported by the National Key R&D Program of China(2019YFB2204304).; This paper presents a low-power high-quality CMOS image sensor(CIS)using 1.5 V 4T pinned photodiode(4T-PPD)and dual correlated double sampling(dual-CDS)column-parallel single-slope ADC.A five-finger shaped pixel layer...; 关键词：CMOS image sensor 4T pinned photodiode single-slope ADC correlated double sample counting method

A new 3-dB bandwidth record of Ge photodiode on Si被引量：1: 《Journal of Semiconductors》2022年第6期6-7,共2页Zhi Liu Chuanbo Li Buwen Cheng; Si photonics is a promising technological approach to realize a photonic integrated circuits on Si substrate with small footprint,high performance,low cost,and being highly compatible with Si complementary metal oxide...; 关键词：WAVEGUIDE COMPLEMENTARY compatibility

Measurement of charge transfer potential barrier in pinned photodiode CMOS image sensors被引量：1: 《Journal of Semiconductors》2016年第5期56-60,共5页曹琛张冰王俊峰吴龙胜; Project supported by the National Defense Pre-Research Foundation of China(No.51311050301095); The charge transfer potential barrier （CTPB） formed beneath the transfer gate causes a noticeable image lag issue in pinned photodiode （PPD） CMOS image sensors （CIS）, and is difficult to measure straightforwardl...; 关键词：CMOS image sensors （C1S） pinned photodiode （PPD） charge transfer potential barrier （CTPB） photoresponse curve

Photoelectric characteristics of an inverse U-shape buried doping design for crosstalk suppression in pinned photodiodes: 《Journal of Semiconductors》2014年第11期81-89,共9页曹琛张冰李炘吴龙胜王俊峰; supported by the National Defense Pre-Research Foundation of China(No.51311050301095); A design of an inverse U-shape buried doping in a pinned photodiode （PPD） of CMOS image sensors is proposed for electrical crosstalk suppression between adjacent pixels. The architecture achieves no extra fill facto...; 关键词：CMOS image sensor electrical crosstalk photoelectric performance design pinned photodiode

Process techniques of charge transfer time reduction for high speed CMOS image sensors被引量：2: 《Journal of Semiconductors》2014年第11期90-97,共8页曹中祥李全良韩烨秦琦冯鹏刘力源吴南健; supported by the National Natural Science Foundation of China(No.61234003);the Special Funds for Major State Basic Research Project of China(No.2011CB932902); This paper proposes pixel process techniques to reduce the charge transfer time in high speed CMOS image sensors. These techniques increase the lateral conductivity of the photo-generated carriers in a pinned photodio...; 关键词：CMOS image sensors high speed large-area pinned photodiode charge transfer time doping concentration depletion mode transistor

Improved two-dimensional responsivity physical model of a CMOS UV and blue-extended photodiode被引量：1: 《Journal of Semiconductors》2014年第9期76-82,共7页陈长平田满芳江震宇金湘亮罗均; Project supported by the State Key Program of the National Natural Science Foundation of China(No.61233010);the National Natural Science Foundation of China(No.61274043);the Program for New Century Excellent Talents in University of Ministry of Education of China(No.NCET-11-0975); A CMOS UV and blue-extended photodiode is presented and fabricated for light detection in the ultraviolet/blue spectral range. An octagon homocentric ring-shaped geometry is used to improve the ultraviolet responsivit...; 关键词：UV/blue-extended photodiode responsivity physical model dead layer effect CMOS process

Influence of temperature on tunneling-enhanced recombination in Si based p–i–n photodiodes被引量：1: 《Journal of Semiconductors》2014年第8期10-14,共5页P.Dalapati N.B.Manik A.N.Basu; We investigate the dominant dark current transport mechanism in Si based p-i-n photodiodes, namely, BPW 21R, SFH 205FA and BPX 61 photodiodes in the temperature range of 350 to 139 K. The forward current- voltage char...; 关键词：PHOTODIODE low temperature ideality factor reverse saturation current tunneling energy

Double junction photodiode for X-ray CMOS sensor IC: 《Journal of Semiconductors》2014年第7期84-89,共6页许超群孙颖韩雁朱大中; supported by the National Natural Science Foundation of China(No.61076075);the Natural Science Foundation of Zhejiang Province(No.Y1100287); A CMOS compatible P＋/Nwell/Psub double junction photodiode pixel was proposed, which can effi- ciently detect fluorescence from CsI（T1） scintillation in an X-ray sensor. Photoelectric and spectral responses of P＋/...; 关键词：double junction photodiode indirect X-ray sensor CMOS X-ray sensor IC fluorescence detection

Pinch-off voltage modeling for CMOS image pixels with a pinned photodiode structure被引量：1: 《Journal of Semiconductors》2014年第7期90-96,共7页曹琛张冰吴龙胜李炘王俊峰; A novel analytical model of pinch-off voltage for CMOS image pixels with a pinned photodiode structure is proposed. The derived model takes account of the gradient doping distributions in the N buried layer due to the...; 关键词：pinned photodiode pixel design pinch-off voltage analytical model

Analysis of incomplete charge transfer effects in a CMOS image sensor被引量：2: 《Journal of Semiconductors》2013年第5期90-95,共6页韩立镪姚素英徐江涛徐超高志远; supported by the National Natural Science Foundation of China(Nos.61036004,61076024); Abs A method to judge complete charger transfer is proposed for a four-transistor CMOS image sensor with a large pixel size. Based on the emission current theory, a qualitative photoresponse model is established to th...; 关键词：CMOS image sensor charge transfer pinned photodiode NONLINEARITY shot noise

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