PHOTODIODE

作品数:104被引量:102H指数:5
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相关领域:电子电信更多>>
相关作者:陈杰金湘亮仇玉林张欣张帅更多>>
相关机构:中国科学院北京邮电大学中国科学院微电子研究所天津大学更多>>
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相关基金:国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划中国博士后科学基金更多>>
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  • 期刊=Nano Researchx
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Thermodynamically induced crystal restructuring to make CsPbCl_(3) single crystal films for weak light detection
《Nano Research》2024年第11期9775-9783,共9页Xiyan Pan Tai An Jie Sun Hua Dong Zhu Ma Guangxing Liang Yongbo Yuan Yang Li Wuqiang Wu Yong Ding Liming Ding 
the National Key Research and Development Program of China(Nos.2022YFB3803300 and 2023YFE0116800);Beijing Natural Science Foundation(No.IS23037).
CsPbCl_(3) perovskite is considered a highly promising material for ultraviolet (UV) photodetectors due to its exceptional thermal stability and excellent short-wavelength light response. However, its high lattice ene...
关键词:CsPbCl3 single crystal film crystal restructuring PHOTODIODE ultraviolet detector 
Van der Waals contacted WSe_(2) ambipolar transistor for in-sensor computing被引量:1
《Nano Research》2023年第11期12713-12719,共7页Yue Wang Haoran Sun Zhe Sheng Jianguo Dong Wennan Hu Dongsheng Tang Zengxing Zhang 
supported by the National Natural Science Foundation of China(No.62274037);the National Key Research and Development Program of China(No.2018YFA0703703);the Ministry of Science and Technology of China(No.2018YFE0118300);State Key Laboratory of ASIC&System(No.2021MS003).
Image sensors with an in-sensor computing architecture have shown great potential in meeting the energy-efficient requirements of emergent data-intensive applications,where images are processed within the photodiode a...
关键词:ambipolar transistor van der Waals contact reconfigurable photodiode in-senor computing 
Two-dimensional reconfigurable electronics enabled by asymmetric floating gate被引量:1
《Nano Research》2022年第5期4439-4447,共9页Tengyu Jin Jing Gao Yanan Wang Yue Zheng Shuo Sun Lei Liu Ming Lin Wei Chen 
Authors acknowledge the financial support from the National Natural Science Foundation of China(Nos.U2032147,21872100,and 11727902);Ministry of Education(MOE),Singapore(No.MOE-T2EP50220-0001);the Science and Engineering Research Council of A*STAR(Agency for Science,Technology,and Research)Singapore(No.A20G9b0135).
Reconfigurable devices with customized functionalities hold great potential in addressing the scaling limits of silicon-based field-effect transistors(FETs).The conventional reconfigurable FETs are limited to the appl...
关键词:reconfigurable device two-dimensional(2D)materials HOMOJUNCTION PHOTODIODE 2-bit memory artificial synapse 
High-performance asymmetric electrodes photodiode based on Sb/WSe2 heterostructure被引量:8
《Nano Research》2019年第2期339-344,共6页Xiao Liu Guangzhuang Sun Peng Chen Junchi Liu Zhengwei Zhang Jia Li Huifang Ma Bei Zhao Ruixia Wu Weiqi Dang Xiangdong Yang Chen Dai Xuwan Tang Zhuojun Chen Lili Miao Xingqiang Liu Bo Li Yuan Liu Xidong Duan 
the National Natural Science Foundation of China (Nos. 61804050 and 51872086);the Double First-Class Initiative of Hunan University (No. 531109100004);the Fundamental Research Funds of the Central Universities (Nos. 531107051078 and 531107051055).
Two-dimensional (2D) van der Waals (vdWs) metal-semiconductor heterostructures with atomically sharp interface and matched work functions have recently attracted great attention due to their unique electronic and opto...
关键词:two-dimensional ASYMMETRIC electrode PHOTODIODE VAN der WAALS (vdWs) HETEROSTRUCTURE OPTOELECTRONICS 
Plasmon resonant amplification of a hot electron-driven photodiode
《Nano Research》2018年第4期2310-2314,共5页Lang Shen Nirakar Poudel George N. Gibson Bingya Hou Jihan Chen Haotian Shi Ernest Guignon William D. Page Arturo Pilar Stephen B. Cronin 
We report plasmon resonant excitation of hot electrons in a photodetector based on a metal/oxide/metal (Au/Al2O3/graphene) heterostructure. In this device, hot electrons, excited optically in the gold layer, jump ov...
关键词:hot electrons plasmonic resonance PLASMON GRATING PHOTOCURRENT NON-EQUILIBRIUM 
Broadband omnidirectional light detection in flexible and hierarchical ZnO/Si heterojunction photodiodes被引量:4
《Nano Research》2017年第1期22-36,共15页Seongdong Lim Doo-Seung Um Minjeong Ha Qianpeng Zhang Youngsu Lee Yuanjing Lin Zhiyong Fan Hyunhyub Ko 
The development of flexible photodetectors has received great attention for future optoelectronic applications including flexible image sensors, biomedical imaging, and smart, wearable systems. Previously omnidirectio...
关键词:flexible photodetector PHOTODIODE OMNIDIRECTIONAL hierarchicalzinc oxide nanowire 
Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe被引量:5
《Nano Research》2015年第10期3332-3341,共10页Xiang Yuan Lei Tang Peng Wang Zhigang Chen Yichao Zou Xiaofeng Su Cheng Zhang Yanwen Liu Weiyi Wang Cong Liu Fansheng Chen Jin Zou Peng Zhou Weida Hu Faxian Xiu 
This work was supported by the National Young 1000 Talent Plan, Pujiang Talent Plan in Shanghai, National Natural Science Foundation of China (Nos. 61322407, 11474058, and 11322441), the Chinese Na- tional Science Fund for Talent Training in Basic Science (No. J1103204), and Ten Thousand Talents Program for young talents. Part of the sample fabrication was performed at Fudan Nano-fabrication Laboratory. We acknowledge Yuanbo Zhang, Yizheng Wu, Zuimin Jiang, Likai Li, Boliang Chen for great assistance during the device fabrication and measurements.
Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with the superior advantages of being flexible, transparent, and highly tunable. Gapless graphene exh...
关键词:GATE wafer-scaletwo-dimensional materials p-n junction imaging PHOTODIODE PHOTOSENSOR 
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