SEMI-INSULATING

作品数:34被引量:18H指数:2
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相关领域:电子电信更多>>
相关作者:赵有文林兰英王超张玉明张义门更多>>
相关机构:中国科学院河北半导体研究所香港大学西安电子科技大学更多>>
相关期刊:《Chinese Physics Letters》《Journal of Energy and Power Engineering》《Science Bulletin》《Science China(Information Sciences)》更多>>
相关基金:国家自然科学基金国家重点基础研究发展计划天津市自然科学基金中国博士后科学基金更多>>
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Sub-bandgap photocurrent response and carrier transport properties of undoped semi-insulating LEG GaAs as a composite被引量:1
《Rare Metals》2003年第3期179-184,共6页YANGRuixia ZHAOZhengping LOUJianzhong LVMiao YANGYongjun LIULihao 
This work was financially supported by the Natural Science Foundation of Tianjin (No. 02380411);the Natural Science Foundation of Hebei Province (No. 601048)
Undoped (ND) semi-insulating (SI) liquid encapsulated Czochralski (LEC) GaAscrystals were investigated by photocurrent and temperature-dependent Hall measurements. It isindicated that strong nonuniformities in the dis...
关键词:semiconductor material GAAS transport property hall measurement COMPOSITE constitutional supercooling photocurrent response 
Effect of As Interstitial Diffusionon on the Properties of Undoped Semi-insulating LECGaAs
《Rare Metals》2001年第3期187-191,共5页Ruixia Yang, Fuqiang Zhang, Nuofu Chen 1) Hebei University of Technology, Tianjin 300130, China 2) Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 
Annealing was carried out at 950 and 1120 degreesC under various As pressure for undoped (ND) semi-insulating (SI) LECGaAs. The effects of annealing on native defects and electrical properties were investigated. Exper...
关键词:semi-insulating GaAs intrinsic acceptor defects As interstitial indiffusion As pressure ANNEALING 
Deep Levels in Undoped Semi-insulating Liquid Encapsulated Czochralski GaAs Detected by Photocurrent Measurement
《Rare Metals》1997年第1期73-76,共4页杨瑞霞 胡凯生 李光平 周智慧 郭小兵 
Deep levels in undoped semi insulating (SI) liquid encapsulated czochralski (LEC) GaAs were investigated through measuring extrinsic photocurrent spectra at 300 K. Two broad photoresponse bands M 1 and M 2 were obs...
关键词:GAAS LEC Photocurrent measurement Deep levels 
Investigation of EL2 Defect in 10 MeV Electron Irradiated Undoped Semi-insulating LEC GaAs
《Rare Metals》1995年第4期249-252,共4页吴凤美 施毅 陈武鸣 吴红卫 赖启基 赵周英 
The induces defects and especially the EL2 defect in 10 MeV electron irradiated undoped semi-insulating(SI) LEC GaAs samples were investigated by using optical transient current spectroscopy (OTCS)technique.The resul...
关键词:Undoped SI-GaAs EL2 OTCS technique 10 MeV electron irra-diation 
Correlation between the Concentrations of  Ionized EL2 and Carbon Acceptor in Undoped Semi-insulating LEC GaAs
《Rare Metals》1994年第2期113-117,共5页杨瑞霞 李光平 
Undoped semi-insulating (SI) LEC GaAs samples were investigated. The concentrations of ionized EL2and carbon acceptor were measured by multiple wavelength infrared absorption and local vibrational modeinfrared absorpt...
关键词:Infrared absorption EL2 Carbon acceptor SI-GAAS 
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