This work was financially supported by the Natural Science Foundation of Tianjin (No. 02380411);the Natural Science Foundation of Hebei Province (No. 601048)
Undoped (ND) semi-insulating (SI) liquid encapsulated Czochralski (LEC) GaAscrystals were investigated by photocurrent and temperature-dependent Hall measurements. It isindicated that strong nonuniformities in the dis...
Annealing was carried out at 950 and 1120 degreesC under various As pressure for undoped (ND) semi-insulating (SI) LECGaAs. The effects of annealing on native defects and electrical properties were investigated. Exper...
Deep levels in undoped semi insulating (SI) liquid encapsulated czochralski (LEC) GaAs were investigated through measuring extrinsic photocurrent spectra at 300 K. Two broad photoresponse bands M 1 and M 2 were obs...
The induces defects and especially the EL2 defect in 10 MeV electron irradiated undoped semi-insulating(SI) LEC GaAs samples were investigated by using optical transient current spectroscopy (OTCS)technique.The resul...
Undoped semi-insulating (SI) LEC GaAs samples were investigated. The concentrations of ionized EL2and carbon acceptor were measured by multiple wavelength infrared absorption and local vibrational modeinfrared absorpt...