HOT-CARRIER

作品数：18被引量：14H指数：3
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相关领域：电子电信更多>>
相关作者：刘斯扬钱钦松孙伟锋王金延张兴更多>>
相关机构：北京大学东南大学西安电子科技大学更多>>
相关期刊：《InfoMat》《Chinese Physics B》《npj Computational Materials》《Journal of Electronics(China)》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划更多>>
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FORWARD GATED-DIODE METHOD FOR EXTRACTING HOT-CARRIER-STRESS-INDUCED BACK INTERFACE TRAPS IN SOI/NMOSFETs
《Journal of Electronics(China)》2002年第3期332-336,共5页He Jin Zhang Xing Huang Ru Wang Yangyuan(institute of Microelectronics, Peking University, Beijing 100871) 
special funds of major state basic research projects (G20000365)
The forward gated-diode R-G current method for extracting the hot-carrier-stress-induced back interface traps in SOI/NMOSFET devices has been demonstrated in this letter. This easy and accurate experimental method dir...
关键词：Hot-carrier-stress Back interface traps R-G current Gated-diode SOI 
A STUDY ON HOT-CARRIER-INDUCED GATE OXIDE BREAKDOWN IN PARTIALLY DEPLETED SIMOX MOSFET'S
《Journal of Electronics(China)》2002年第1期50-56,共7页Liu Hongxia Hao Yue Zhu Jiangang (Microelectronics Institute, Xidian University, Xi’an 710071) 
Supported by the National Advance Research Foundation of China.(No.9825741)
The hot-carrier-induced oxide regions in the front and back interfaces are systematically studied for partially depleted SOI MOSFET's. The gate oxide properties are investigated for channel hot-carrier effects. The ho...
关键词：Hot-Carrier Effects (HCE) Device lifetime SOI MOSFET SIMOX 
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