NON-PLANAR

作品数：27被引量：33H指数：3
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相关领域：理学更多>>
相关作者：欧文巩轲钱鹤李明更多>>
相关机构：中国科学院微电子研究所清华大学更多>>
相关期刊：《Plasma Science and Technology》《Frontiers of Information Technology & Electronic Engineering》《Acta Mathematica Sinica,English Series》《Chemical Research in Chinese Universities》更多>>
相关基金：国家自然科学基金国家教育部博士点基金以色列科学基金中国博士后科学基金更多>>
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Thin-film growth behavior of non-planar vanadium oxide phthalocyanine
《Chinese Physics B》2019年第8期369-375,共7页Tian-Jiao Liu Hua-Yan Xia Biao Liu Mei Fang Jun-Liang Yang 
Project supported by the National Natural Science Foundation of China(Grant No.51673214);the National Key Research and Development Program of China(Grant No.2017YFA0206600)
The thin film properties of organic semiconductors are very important to the device performance.Herein,non-planar vanadyl phthalocyanine(VOPc)thin films grown on rigid substrates of indium tin oxide,silicon dioxide,an...
关键词：ORGANIC SEMICONDUCTOR thin film VANADYL phthalocyanine(VOPc) growth BEHAVIOR 
Effect of substrate curvature on thickness distribution of polydimethylsiloxane thin film in spin coating process
《Chinese Physics B》2018年第6期479-487,共9页Ying Yan Ping Zhou Shang-Xiong Zhang Xiao-Guang Guo Dong-Ming Guo 
supported by the National Natural Science Foundation of China(Grant Nos.51605079 and 51475076);the Science Fund for Creative Research Groups of the National Natural Science Foundation of China(Grant No.51621064);the China Postdoctoral Science Foundation(Grant No.2016M591424)
The polymer spin coating is critical in flexible electronic manufaction and micro-electro-mechanical system（MEMS）devices due to its simple operation, and uniformly coated layers. Some researchers focus on the effect...
关键词：spin coating non-planar substrate film thickness distribution edge-bead effect 
L_g=100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n^+-GaN layer by MOCVD被引量：2
《Chinese Physics B》2014年第12期508-512,共5页黄杰 黎明 邓泽华 刘纪美 
Project supported by the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.61401373);the Fundamental Research Funds for Central Universities,China(Grant No.XDJK2013B004);the Research Fund for the Doctoral Program of Southwest University,China(Grant No.SWU111030)
High-performance Al Ga N/Ga N high electron mobility transistors（HEMTs） grown on silicon substrates by metal–organic chemical-vapor deposition（MOCVD） with a selective non-planar n-type Ga N source/drain（S/D） re...
关键词：Ga N HEMTS S/D（S/D） regrowth MOCVD 
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