SNAPBACK

作品数：24被引量：35H指数：3
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相关领域：电子电信更多>>
相关作者：郝跃陈万军张波马晓华朱志炜更多>>
相关机构：电子科技大学西安电子科技大学中国电子科技集团第五十八研究所江南大学更多>>
相关期刊：《Chinese Journal of Electronics》《Journal of Civil Engineering and Architecture》《Research》《物理学报》更多>>
相关基金：国家自然科学基金北京市自然科学基金重庆市自然科学基金中国博士后科学基金更多>>
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A novel double trench reverse conducting IGBT with robust freewheeling switch
《Journal of Semiconductors》2014年第8期79-83,共5页朱利恒 陈星弼 
Project supported by the National Natural Science Foundation of China(No.51237001);the Fundamental Research Funds for the Central Universities(No.E022050205)
The phenomenon that the wide P-emitter region in the conventional reverse conducting insulated gate bipolar transistor （RC-IGBT） results in the non-uniform current distribution in the integrated freewheeling diode ...
关键词：reverse conducting insulated gate bipolar transistor SNAPBACK current concentration 
Novel reverse conducting insulated gate bipolar transistor with anti-parallel MOS controlled thyristor
《Journal of Semiconductors》2014年第7期48-51,共4页朱利恒 陈星弼 
supported by the National Natural Science Foundation of China(No.51237001);the Fundamental Research Funds for the Central Universities of China(No.E022050205)
Novel reverse-conducting IGBT （RC-IGBT） with anti-parallel MOS controlled thyristor （MCT） is proposed. Its major feature is the introduction of an automatically controlled MCT at the anode, by which the anodeshort...
关键词：reverse conducting IGBT snapback flee turn-off energy reverse-recovery charge 
Theoretical calculation of the p-emitter length for snapback-free reverse-conducting IGBT被引量：2
《Journal of Semiconductors》2014年第6期62-66,共5页朱利恒 陈星弼 
Project supported by the Fundamental Research Funds for the Central Universities(No.E022050205);the National Natural Science Foundation of China(No.51237001)
A physically based equation for predicting required p-emitter length of a snapback-free reverse- conducting insulated gate bipolar transistor （RC-IGBT） with field-stop structure is proposed. The n-buffer resis- tanc...
关键词：reverse conducting insulated gate bipolar transistor voltage snapback 
A snapback suppressed reverse-conducting IGBT with uniform temperature distribution被引量：2
《Chinese Physics B》2014年第1期513-518,共6页刘念 罗小光 章毛连 
Project supported by the National Science and Technology Major Project, China （Grant No. 2011ZX02504-003）, the National Natural Science Foundation of China （Grant No. 61076082）, and the Fundamental Research Funds for the Central Universities, China （Grant No. ZYGX2011 J024）.
A novel reverse-conducting insulated-gate bipolar transistor （RC-IGBT） featuring a floating P-plug is proposed. The P-plug is embedded in the n-buffer layer to obstruct the electron current from flowing directly to ...
关键词：reverse-conducting insulated-gate BIPOLAR transistor snapback temperature reliability 
Mechanism of Reverse Snapback on I-V Characteristics of Power SITHs with Buried Gate Structure被引量：1
《Journal of Semiconductors》2008年第3期461-466,共6页王永顺 李海蓉 吴蓉 李思渊 
The reverse snapback phenomena （RSP） on I-V characteristics of static induction thyristors （SITH） are physically researched. The I-V curves of the power SITH exhibit reverse snapback phenomena, and even turn to th...
关键词：power static induction thyristor reverse snapback electron-hole plasma LIFETIME injection level 
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