Project supported by the National Natural Science Foundation of China (Grant No.52076080);the Natural Science Foundation of Hebei Province of China (Grant No.E2020502011)。
The combination of different nanostructures can hinder phonons transmission in a wide frequency range and further reduce the thermal conductivity(TC).This will benefit the improvement and application of thermoelectric...
supported by the Center for Biosystems,Neuroscience,and Nanotechnology (CBNN) of the City University of Hong Kong (9360148,9380062);the University Grants Council of Hong Kong (GRF Projects:11212519,11207620,and 11207821).
The extracellular matrix serves as structural support for cells and provides biophysical and biochemical cues for cell migration.Topography,material,and surface energy can regulate cell migration behaviors.Here,the re...
the National Natural Science Foundation of China(grants Nos.51976002 and 51776007);Beijing Nova Program of Science and Technology(No.Z191100001119033);the Young Talent Project of Beijing Municipal Education Committee(No.CIT&TCD201904015)。
In this study,by using the nonequilibrium molecular dynamics and the kinetic theory,we examine the tailored nanoscale thermal transport via a gas-filled nanogap structure with mechanically-controllable nanopillars in ...
the State Key Laboratory of Advanced Optical Communication Systems and Networks,China(Grant No.2019GZKF2).
We report that using asymmetric lattice periods can enhance the quality factor of plasmonic surface lattice resonances(SLRs)in two-dimensional array of metal-insulator-metal nanopillars in asymmetric dielectric enviro...
supported by the U.S.National Science Foundation(No.DMR-1410596 to J.M.Z);supported by the centre for High-resolution Electron Microscopy(ChEM)of SPST at Shanghai Tech University(No.EM02161943)。
Remarkable diversity is observed in dislocation interactions that are responsible for intermittent and sudden crystal slips.While large crystal slips can be easily observed on the surface of deformed crystals,unraveli...
supported by Hong Kong Research Grant Council (RGC)(Grant No. U11207416);City University of Hong Kong (Grant No.7005234);National Natural Science Foundation of China under the Excellent Young Scientists Fund (Grant No. 11922215)。
As a wide-bandgap semiconductor, 4H-SiC is an ideal material for high-power and high-frequency devices, and plays an increasingly important role in developing our country’s future electric vehicles and 5G techniques....
supported by the National Research Foundation (NRF) of Korea;funded by the Ministry of Science and ICT (No. 2016R1A2B2010170);the Ministry of Education (No. 2018R1A6A1A03025242);the Sabbatical Year Grant of Kwangwoon University in 2019;the Australian Research Council Future Fellowship (FT110100853,Dr. Duk-Yong Choi)
Angle tolerant transmissive subtractive color filters incorporating a metasurface exploiting hydrogenated amorphous silicon nanopillars(NPs) on a glass substrate were proposed and demonstrated. The achieved transmissi...
In this work, we present plasma etching alone as a directed assembly method to both create the nanodot pattern on an etched polymeric (PMMA) film and transfer it to a silicon substrate for the fabrication of silicon n...
the National Key Research and Development Program of China under Grant Nos 2017YFA206303 and 2016YFB0700901;the National Natural Science Foundation of China under Grant Nos 51731001,51371009 and 51271004
To investigate the process of strain relaxation and resultant variation of microstructure and magnetic properties,low-doped La_(0.825)Sr_(0.175)MnO_3 epitaxial films with different thicknesses are deposited on LaAlO_3...
Project supported by the Special Funds for Major State Basic Research Project(Nos.2011CB301900,2012CB619304,2010CB327504);the Hi-Tech Research Project(No.2011AA03A103);the National Natural Science Foundation of China(Nos.60990311,61274003,60936004,61176063);the Natural Science Foundation of Jiangsu Province(No.BK2011010)
Uniform GaN nanopillar arrays have been successfully fabricated by inductively coupled plasma etching using self-organized nickel nano-islands as the masks on GaN/sapphire. GaN nanopillars with diameters of 350 nm and...