POST-OXIDATION

作品数：5被引量：5H指数：1
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相关领域：电子电信更多>>
相关机构：中国科学院微电子研究所更多>>
相关期刊：《Journal of Semiconductors》《Chinese Physics B》《Chinese Optics Letters》《Nano Research》更多>>
相关基金：国家自然科学基金更多>>
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Surface oxidation of carbon dots enables highly selective and sensitive chemiluminescence detection of hydroxyl radical
《Nano Research》2024年第11期9275-9283,共9页Chan Wang Yuan Fang Dongrun Zhou Chenxi Wu Han Zhu Qijun Song 
supported by the National Natural Science Foundation of China(Nos.51973083 and 22376081).
The rapid quantification of hydroxyl radical (·OH) in real samples is a great challenge due to its highly reactive nature and the potential interferences from other coexisting reactive oxygen species (ROS). Herein, a...
关键词：carbon dots POST-OXIDATION chemiluminescence probe detection of·OH cigarette and mosquito coil smoke 
Angle-resolved x-ray photoelectron spectroscopy study of GeO_x growth by plasma post-oxidation
《Chinese Physics B》2017年第10期453-458,共6页赵治乾 张静 王晓磊 魏淑华 赵超 王文武 
supported by the National Natural Science Foundation of China(Grant Nos.61574168 and 61504163)
The growth process of GeOx films formed by plasma post-oxidation （PPO） at room temperature （RT） is investigated using angle-resolved x-ray photoelectron spectroscopy （AR-XPS）. The experimental results show that ...
关键词：Ge plasma post-oxidation MOS XPS 
Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO_2 after high temperature oxidation被引量：1
《Journal of Semiconductors》2015年第9期58-61,共4页李妍月 邓小川 刘云峰 赵艳黎 李诚瞻 陈茜茜 张波 
Project supported by the National Natural Science Foundation of China(No.61234006);the State Grid of China(No.sgri-wd-71-14-003)
The interface properties of 4H-SiC metal oxide semiconductor （MOS） capacitors with post-oxidation annealing （POA） in nitric oxide （NO） ambient after high temperature （1300 ℃） oxidation have been investigated ...
关键词：C-V characteristics 4H-SiC MOS post-oxidation annealing SiC/SiO2 
Improvement of InGaAs/GaAs vertical-cavity surface-emitting lasers by post-oxidation annealing被引量：1
《Chinese Optics Letters》2012年第12期68-70,共3页晏长岭 邓昀 李鹏 宋小卯 史建伟 
supported by the National Natural Science Foundation of China under Grant Nos.60676025 and 61076038
InGaAs/GaAs vertical-cavity surface-emitting lasers （VCSELs） are fabricated by a thermal selective wet- oxidation confinement technique. Post-oxidation annealing in a nitrogen environment at high temperatures is the...
关键词：OXIDATION Surface emitting lasers Testing 
Study of nanocrystalline VO_2 thin films prepared by magnetron sputtering and post-oxidation被引量：3
《Chinese Physics B》2010年第10期364-369,共6页罗振飞 吴志明 许向东 王涛 蒋亚东 
Project partly supported by the National Natural Science Foundation of China (Grant No. 60736005)
Nanocrystalline VO2 thin films were deposited onto glass slides by direct current magnetron sputtering and postoxidation. These films undergo semiconductor-metal transition at 70 ℃, accompanied by a resistance drop o...
关键词：nanocrystal vanadium dioxide magnetron sputtering POST-OXIDATION 
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