Y99-61803-67 2003110低功率256KB 静态随机存取存储器的设计=A lowpower 256KB SRAM design[会,英]/Bhaumik,B.&Pradhan,P./Proeeedings of the 12th InternationalConferenee of VLSILDsign一67一70(EZ)
Y99-61590-95 0001361在具有薄隧道氧化物的快闪存储器中小泄漏电流的详细观察=Detailed observation of small leak current inflash memories with thin tunnel oxides[会,英]/Manabe,Y.& Okuyama,K.//1998 IEEE International Confer...