P-SI

作品数：177被引量：223H指数：7
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Improving interfacial and electrical properties of HfO_(2)/SiO_(2)/p-Si stacks with N_(2)-plasma-treated SiO_(2) interfacial layer被引量：1
《Rare Metals》2023年第6期2081-2086,共6页Xiao-Qiang Chen Yu-Hua Xiong Jun Du Feng Wei Hong-Bin Zhao Qing-Zhu Zhang Wen-Qiang Zhang Xiao-Ping Liang 
financially supported by the National Science and Technology Major Project of China (No. 2013ZX02303-001-002)。
The effect of N_(2)-plasma-treated SiO_(2) interfacial layer on the interfacial and electrical characteristics of HfO_(2)/SiO_(2)/p-Si stacks grown by atomic layer deposition(ALD) was investigated.The microstructure a...
关键词：METAL-OXIDE-SEMICONDUCTOR High-k Atomic layer deposited N_(2)-plasma treatment Interfacial characteristic Reliability 
Optimizing ef?ciency of polycrystalline p-Si anode organic light-emitting diode被引量：1
《Rare Metals》2016年第11期826-830,共5页Jian-Xing Luo Wei Wang Hu Meng Wan-Jin Xu Guo-Gang Qin 
financially supported by the National Natural Science Foundation of China (Nos. 50732001, 10674012, 10874001, and 60877022);the National Basic Research Program of China (No. 2007CB613402)
Optimizing efficiency of organic light-emitting diodes（OLEDs） with a structure of Al/glass/nanometerthick polycrystalline p-Si（NPPS） anode/SiO_2/N＇-bis-（1-naphthl）-diphenyl-1,1＇-biphenyl-4,4＇-diamine（NPB）/t...
关键词：Organic light-emitting diode Polycrystallinep-Si Magnetron sputtering ELECTROLUMINESCENCE 
Structure and optical characterization of GaP-SiO_2 co-sputtered films
《Rare Metals》2008年第6期580-585,共6页CHAI Yuesheng YANG Meihui ZHANG Mingang SUN Gang 
financially supported by the University Students’ Innovation and Start-ups Special Project of Tai-yuan Science and Technology Board (No. 07010759);the Natural Science Foundation of Shanxi Province, China (No. 20041073)
The films of GaP nanocrystals embedded in SiO2 matrix were prepared by radio frequency magnetron co-sputtering and subsequent annealing technology. The structure and morphology of the films were investigated by scanni...
关键词：semiconductor materials nanocrystal-embedded film PHOTOLUMINESCENCE radio frequency magnetron co-sputtering 
Preparation of nanocrystalline palladium on p-Si by electroless deposition and its photo-electrochemical hydrogen evolution property
《Rare Metals》2006年第3期241-245,共5页YAO Suwei LI He ZHANG Weiguo WANG Hongzhi BEN Yuheng 
This work is financially supported by the National Natural Science Foundation of China (No. 50271046) and the Special-ized Research Fund for the Doctoral Program of Higher Education (No. 20030056034)
The Pd-modified p-Si electrode was prepared by means of electroless deposition. The average diameter of Pd nanoparticles was about 80 nm from SEM observations. XRD results showed that the structure of Pd coatings was ...
关键词：ELECTROCHEMISTRY Pd-modified p-Si electrode ELECTROLESS hydrogen evolution reaction 
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