PHEMT

作品数：278被引量：277H指数：7
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相关领域：电子电信更多>>
相关作者：张海英陈效建王志功李拂晓叶甜春更多>>
相关机构：中国电子科技集团第十三研究所南京电子器件研究所中国科学院微电子研究所电子科技大学更多>>
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相关基金：国家自然科学基金国家高技术研究发展计划国家重点基础研究发展计划河北省自然科学基金更多>>
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Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse被引量：4
《Chinese Physics B》2016年第8期458-462,共5页席晓文 柴常春 刘阳 杨银堂 樊庆扬 史春蕾 
supported by the National Basic Research Program of China(Grant No.2014CB339900);the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology,China Academy of Engineering Physics(CAEP)(Grant No.2015-0214.XY.K)
An electromagnetic pulse（EMP）-induced damage model based on the internal damage mechanism of the Ga As pseudomorphic high electron mobility transistor（PHEMT） is established in this paper. With this model, the rela...
关键词：PHEMT electromagnetic pulse damage threshold empirical formula 
Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse被引量：2
《Chinese Physics B》2016年第4期456-460,共5页席晓文 柴常春 赵刚 杨银堂 于新海 刘阳 
supported by the National Basic Research Program of China(Grant No.2014CB339900);the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology,China Academy of Engineering Physics(CAEP)(Grant No.2015-0214.XY.K)
The damage effect and mechanism of the electromagnetic pulse （EMP） on the GaAs pseudomorphic high electron mobility transistor （PHEMT） are investigated in this paper. By using the device simulation software, the d...
关键词：PHEMT the electromagnetic pulse damage effect 
Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor被引量：9
《Chinese Physics B》2015年第4期525-529,共5页于新海 柴常春 刘阳 杨银堂 席晓文 
Project supported by the National Basic Research Program of China(Grant No.2014CB339900);the National Natural Science Foundation of China(Grant No.60776034)
The high power microwave （HPM） damage effect on the AIGaAs/InGaAs pseudomorphic high electron mobility transistor （pHEMT） is studied by simulation and experiments. Simulated results suggest that the HPM damage to ...
关键词：PHEMT damage mechanism high power microwave pulse-width 
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