PRESSURE_SENSOR

作品数：166被引量：416H指数：11
导出分析报告
相关作者：翟永许亮亮王恒义张振华裴勤更多>>
相关机构：中北大学南京外国语学校南京大学中国人民解放军海军工程大学更多>>
相关期刊：更多>>
相关基金：国家自然科学基金中国博士后科学基金国家高技术研究发展计划高等学校学科创新引智计划更多>>
-
在结果中检索

检索结果分析

结果分析中...
选择条件：
  • 期刊=Journal of Semiconductorsx
共 条 记 录，以下是1-7
全选清除导出
参考文献引证文献引用追踪
视图：
排序：
Self-healing Au/PVDF-HFP composite ionic gel for flexible underwater pressure sensor被引量：2
《Journal of Semiconductors》2023年第3期76-94,共19页Ruiyang Yin Linlin Li Lili Wang Zheng Lou 
supported by the National Natural Science Foundation of China(NSFC,Grant Nos.61874111,62174152 and 62022079);the National Key Research and Development Program of China(Grant No.2020YFB1506400);the Youth Innovation Promotion Association of the Chinese Academy of Sciences(No.2020115);the Strategic Priority Research Program of the Chinese Academy of Sciences(XDA16021200).
Ionic gels can be potentially used in wearable devices owing to their high humidity resistance and non-volatility.However,the applicability of existing ionic gel pressure sensors is limited by their low sensitivity.Th...
关键词：ionic gel pressure sensor high performance underwater operation SELF-HEALING 
Temperature characteristics research of SOI pressure sensor based on asymmetric base region transistor被引量：5
《Journal of Semiconductors》2017年第7期89-92,共4页Xiaofeng Zhao Dandan Li Yang Yu Dianzhong Wen 
supported by the National Natural Science Foundation of China(No.61471159);the Natural Science Foundation of Heilongjiang Province(No.F201433);the University Nursing Program for Young Scholars with Creative Talents in Heilongjiang Province(No.2015018);the Special Funds for Science and Technology Innovation Talents of Harbin in China(No.2016RAXXJ016)
Based on the asymmetric base region transistor, a pressure sensor with temperature compensation circuit is proposed in this paper. The pressure sensitive structure of the proposed sensor is constructed by a C-type sil...
关键词：SOI pressure sensor asymmetric base region transistor temperature compensation temperature coefficient of the sensitivity MEMS technology 
A novel pressure sensor calibration system based on a neural network被引量：1
《Journal of Semiconductors》2015年第9期121-124,共4页彭晓钧 杨坤涛 元秀华 
Project supported by the National Natural Science Foundation of China(No.61275081)
According to the specific input-output characteristics of a pressure sensor, a novel calibration algorithm is presented and a calibration system is developed to correct the nonlinear error caused by temperature. In co...
关键词：nonlinear error correction comprehensive compensation curve fitting neural network high precision 
Micro packaged MEMS pressure sensor for intracranial pressure measurement
《Journal of Semiconductors》2015年第6期76-79,共4页刘雄 姚言 马嘉豪 张龑航 王谦 张兆华 任天令 
Project supported by the National Natural Science Foundation of China(Nos.61025021,61434001);the ‘Thousands Talents’ Program for Pioneer Researchers and Its Innovation Team,China
This paper presents a micro packaged MEMS pressure sensor for intracranial pressure measurement which belongs to BioMEMS. It can be used in lumbar puncture surgery to measure intracranial pressure. Minia- turization i...
关键词：intracranial pressure measurement lumbar puncture surgery BIOMEMS quad flat no-lead package waterproof test 
A novel SOI pressure sensor for high temperature application被引量：3
《Journal of Semiconductors》2015年第1期120-124,共5页李赛男 梁庭 王伟 洪应平 郑庭丽 熊继军 
Project supported by the Key Program of the National Natural Science Foundation of China(No.61335008)
The silicon on insulator（SOI） high temperature pressure sensor is a novel pressure sensor with highperformance and high-quality. A structure of a SOI high-temperature pressure sensor is presented in this paper.The k...
关键词：SOI high temperature pressure sensor doping concentration power 
A readout system for passive pressure sensors被引量：1
《Journal of Semiconductors》2013年第12期91-96,共6页张会新 洪应平 葛冰儿 梁庭 熊继军 
Project supported by the National Basic Research Program of China(No.2010CB334703);the National Natural Science Foundation of China(No.51075375)
This paper presents a readout system for the passive pressure sensors which consist of a pressure- sensitive capacitor and an inductance coil to form an LC circuit. The LC circuit transforms the pressure variation int...
关键词：passive pressure sensor LC resonant circuit resonant frequency inductive coupling WIRELESS 
A novel dual-functional MEMS sensor integrating both pressure and temperature units
《Journal of Semiconductors》2010年第7期65-71,共7页陈涛 张兆华 任天令 缪顾进 周长见 林惠旺 刘理天 
Project supported by the National High Technology Research and Development Program of China(No.2006AA04Z372).
This paper proposes a novel miniature dual-functional sensor integrating both pressure and temperature sensitive units on a single chip.The device wafer of SOI is used as a pizeoresistive diaphragm which features exce...
关键词：SOI MEMS pressure sensor temperature sensor 
全选清除导出
共1页<1>
检索报告 对象比较 聚类工具 使用帮助 返回顶部