supported by the Italian National Institute of Nuclear Physics(INFN);partially funded by the Italian Ministry of Research in the framework of FIRB–Fondo per gli Investimenti della Ricerca di Base(No.RBFR12NK5K)
This paper reports the fabrication of Nb thin films through pulsed laser deposition at different substrate temperatures, ranging from 300 to 660 K. While the variation of the substrate temperature does not affect sign...
supported partially by the Italian Ministry of Research in the framework of FIRB-Fondo per gli Investimenti della Ricerca di Base(Project no.RBFR12NK5K);the Italian National Institute of Nuclear Physics(INFN)
The growth of Nb thin films on Si(100) substrates by different laser fluences (4-15 J/cm2) was reported, The pulsed Nd:YAG laser deposition (PLD) under influence of laser fluence on ablation rate and deposition...
supported by the Italian National Institute of Nuclear Physics(INFN)
This work deals with the deposition of lead (Pb) thin films by the UV pulsed laser ablation technique, for their further use as photocathode devices in superconducting radio frequency guns. Scanning electron microsc...
Magnesium (Mg)-hydroxyapatite (Calo(PO4)6(OH)2, abbreviated as HA) composite films have been grown on Mg plates using a pulsed laser deposition technique. Mechanical property measurements and analysis have ind...
UGC-DAE,CSR Indore Project (CSR-I/CSR_Indore/PROJ/SANC/36/2008/927);DST for the award of Fast Track Young Scientist (No.SR/FTP/PS-138/2010)
Studies on the ZnO/La0.5Pr0.2Sr0.3Mn03 (LPSMO)/SrNb0.002Ti0.99803 (SNTO) heterostructure having varying thickness of p-type LPSMO (100 nm - LP1) and (200 nm - LP2) manganite are carried out. ZnO/LPSMO (n-p) ...
supported by Deanship of Scientific Research at King Fahd University of Petroleum and Minerals through internal research grant IN100040
In the present study, gallium nitride thin films were grown by using pulsed laser deposition. After the growth samples were annealed at 400 and 600 ℃ in the nitrogen atmosphere. Surface morphology of the as-grown and...
ZnO thin films were grown on Si (100) substrates by pulsed laser deposition using a ZnO target.The substrate temperature was varied in the range of room temperature to 800 ℃,and the oxygen partial pressure of 0.133...
About φ45 mm LiAlO2 single crystal was grown by Czochralski (Cz) technique. However, the full-width at half-maximum (FWHM) value was high to 116.9 arcsec. After three vapor transport equilibration (VTE) process...
ZnO thin films were deposited on the substrates of (100) γ-LiAlO2 at 400,550 and 700℃ using pulsed laser deposition (PLD) with the fixed oxygen pressure of 20 Pa, respectively. When the substrate temperature is ...
PtSi ultra-thin films were grown on Si-wafer using pulsed laser deposition (PLD). The surface structure of these films was studied by atomic force microscopy (AFM). In addition, the compositional structure of the PtSi...