SIH4

作品数：53被引量：44H指数：2
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相关作者：傅广生韩理张连水陆庆正孔繁敖更多>>
相关机构：大连理工大学中国科学技术大学浙江大学河北大学更多>>
相关期刊：《功能材料》《Journal of Materials Science & Technology》《河北大学学报（自然科学版）》《薄膜科学与技术》更多>>
相关基金：国家自然科学基金中国博士后科学基金河南省教育厅科学技术研究重点项目广东省自然科学基金更多>>
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Velocity and Stability of Condensed Polymorphic SiH4: A High-Temperature High-Pressure Brillouin Investigation
《Chinese Physics Letters》2020年第6期48-52,共5页Jiayu Wang Qiang Zhou Siyang Guo Yanping Huang Xiaoli Huang Lu Wang Fangfei Li Tian Cui 
Supported by the National Key Research and Development Program(Grant No.2017YFA0403704);the National Natural Science Foundation of China(Grant Nos.11474127,11574112,11274137,and 11504127);the Program for Changjiang Scholars and Innovative Research Team in University(Grant No.IRT1132);China Postdoctoral Science Foundation(Grant No.2015M570265)。
Silane(SiH4)is a promising hydrogen-rich compound for pursing high temperature superconducting.Previous high pressure measurements of Raman,x-ray diffraction and theoretical studies on SiH4 mainly focused on its polym...
关键词：BRILLOUIN COMPOUND EXTREME 
Fast Homoepitaxial Growth of 4H-SiC Films on 4° off-Axis Substrates in a SiH4-C2H4-H2 System
《Chinese Physics Letters》2013年第12期157-160,共4页LIU Bin SUN Guo-Sheng LIU Xing-Fang ZHANG Feng DONG Lin ZHENG Liu YAN Guo-Guo LIU Sheng-Bei ZHAO Wan-Shun WANG Lei ZENG Yi-Ping LI Xi-Guang WANG Zhan-Guo YANG Fei 
Supported in part by the Program of 2011(2nd)Innovative Research Teams and Leading Talents in Guangdong Province of China,the Program of Strategical Boomindustry Key Technology of Guangdong Province,the Major Science and Technology Program of Dongguan,the Program of State Grid Smart Grid Research Institute(SGRIWD7113004);the National Natural Science Foundation of China under Grant Nos 51102225 and 61274007;the Natural Science Foundation of Beijing under Grant No 4132074.
Homoepitaxial growth of 4H-SiC epilayers is conducted in a SiH_(4)-C_(2)H_(4)-H_(2) system by low pressure hot-wall vertical chemical vapor deposition(CVD).Thick epilayers of 45μm are achieved at a high growth rate u...
关键词：temperature ROUGHNESS EPITAXIAL 
Electronic, Vibrational, and Superconducting Properties of High-Pressure Metallic SiH4： ab initio Calculations
《Chinese Physics Letters》2010年第1期227-230,共4页闫岩 宫杰 宗占国 
Supported by the National Natural Science Foundation of China under Grant No 10676011.
We extensively explore the experimentally proposed metallic structure of hcp P63 for the hydrogen rich compound, SiH4. It is found that the lattice dynamic of this structure is severely unstable. By freezing the softe...
Dust Charging in Electronegative SiH4 Plasmas
《Chinese Physics Letters》2005年第2期405-408,共4页段萍 王正汹 刘悦 刘金远 王晓钢 
Adsorption and Thermal Decomposition of SiH4 on Cu(111) by Multiple-Scattering Cluster Method
《Chinese Physics Letters》2000年第7期525-527,共3页HE Jiang-ping TANG Jing-chang 
Supported by the National Natural Science Foundation of China under Grant No.19974036.
Adsorption and thermal decomposition of SiH4 on Cu(111)at 110 K has been studied by the calculation of silicon K-edge near edge x-ray absorption fine structure spectra using multiple-scattering cluster method.It is fo...
关键词：METHOD CU(111) ADSORPTION 
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