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SRAM: 作品数：1042被引量：981H指数：11; 导出分析报告; 相关领域：自动化与计算机技术电子电信更多>>; 相关作者：吴秀龙彭春雨韩郑生蔺智挺卢文娟更多>>; 相关机构：安徽大学国防科学技术大学中芯国际集成电路制造(上海)有限公司中国科学院微电子研究所更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家高技术研究发展计划国家科技重大专项中央高校基本科研业务费专项资金更多>>

Variation tolerance for high-speed negative capacitance FinFET SRAM bit cell: 《Journal of Semiconductors》2020年第6期56-61,共6页Yaqian Qian Shushan Qiao Rongqiang Yang; This work was supported in part by the University of Chinese Academy of Science;SMIC。; Negative capacitance FinFET(NC-FinFET)has a promising developmental prospect due to its superior performance in SS<60 mV/dec(subthreshold swing),especially in SRAM.Noise margin is an important metric to evaluate the p...; 关键词：negative-capacitance FinFET(NC-FinFET)SRAM VARIATION noise margin speed

Application of source biasing technique for energy efficient DECODER circuit design: memory array application: 《Journal of Semiconductors》2018年第4期49-54,共6页Neha Gupta Priyanka Parihar Vaibhav Neema; financial support under the R&D project scheme. No: 1950/CST/R&D/Phy & Engg Sc/2015 27th Aug 2015; Researchers have proposed many circuit techniques to reduce leakage power dissipation in memory cells. If we want to reduce the overall power in the memory system, we have to work on the input circuitry of memory arch...; 关键词：SRAM leakage current DELAY SLEEP transistor

A boosted negative bit-line SRAM with write-assisted cell in 45 nm CMOS technology被引量：1: 《Journal of Semiconductors》2018年第2期51-62,共12页Vipul Bhatnagar Pradeep Kumar Neeta Pandey Sujata Pandey; A new 11 T SRAM cell with write-assist is proposed to improve operation at low supply voltage. In this technique, a negative bit-line voltage is applied to one of the write bit-lines, while a boosted voltage is applie...; 关键词：write-assist in SRAM boosted negative bit-line reduced write delay low leakage reduced supply voltage

6T SRAM cell analysis for DRV and read stability: 《Journal of Semiconductors》2017年第2期73-79,共7页Ruchi S.Dasgupta; The present paper analyzes the hold and read stability with temperature and aspect ratio variations. To reduce the power dissipation, one of the effective techniques is the supply voltage reduction. At this reduced su...; 关键词：DRV SRRV WRRV data retention leakage reduction low power SRAM sensitivity analysis

Efficient SRAM yield optimization with mixture surrogate modeling: 《Journal of Semiconductors》2016年第12期64-69,共6页蒋中建叶佐昌王燕; Largely repeated cells such as SRAM cells usually require extremely low failure-rate to ensure a mod- erate chi yield. Though fast Monte Carlo methods such as importance sampling and its variants can be used for yield...; 关键词：yield optimization process variations design variations mixture surrogate model statistical analysis importance sampling

Design of replica bit line control circuit to optimize power for SRAM: 《Journal of Semiconductors》2016年第12期70-75,共6页汪鹏君周可基张会红龚道辉; Project supported by the Zhejiang Provincial Natural Science Foundation of China(No.LQ14F040001);the National Natural Science Foundation of China(Nos.61274132,61234002,61474068);the K.C.Wong Magna Fund in Ningbo University; A design of a replica bit line control circuit to optimize power for SRAM is proposed. The proposed design overcomes the limitations of the traditional replica bit line control circuit, which cannot shut off the word ...; 关键词：low power static random access memory （SRAM） replica bit line control circuit circuit design

Modeling and simulation of carbon nanotube field effect transistor and its circuit application被引量：1: 《Journal of Semiconductors》2016年第7期35-40,共6页Amandeep Singh Dinesh Kumar Saini Dinesh Agarwal Sajal Aggarwal Mamta Khosla Balwinder Raj; The carbon nanotube field effect transistor （CNTFET） is modelled for circuit application. The model is based on the transport mechanism and it directly relates the transport mechanism with the chirality. Also, it do...; 关键词：carbon nanotube CNTFET SRAM HSPICE NanoTCAD ViDES

Monolithically integrated enhancement/depletion-mode Al Ga N/Ga N HEMTs SRAM unit and voltage level shifter using fluorine plasma treatment被引量：1: 《Journal of Semiconductors》2016年第5期78-83,共6页陈永和郑雪峰张进城马晓华郝跃; Project supported by the National Natural Science Foundation of China(No.61334002);the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory(No.ZHD201206);the Program for New Century Excellent Talents in University(No.NCET-12-0915); A GaN-based E/D mode direct-couple logic 6 transistors SRAM unit and a voltage level shifter were designed and fabricated. E-mode and D-mode A1GaN/GaN HEMTs were integrated in one wafer using fluorine plasma treatment...; 关键词：AlGaN/GaN E/D mode SRAM voltage level shifter

Design of power balance SRAM for DPA-resistance被引量：1: 《Journal of Semiconductors》2016年第4期106-112,共7页周可基汪鹏君温亮; Project supported by the Zhejiang Provincial Natural Science Foundation of China(No.LQ14F040001);the National Natural Science Foundation of China(Nos.61274132,61234002);the K.C.Wong Magna Fund in Ningbo University,China; A power balance static random-access memory（SRAM） for resistance to differential power analysis（DPA） is proposed. In the proposed design, the switch power consumption and short-circuit power consumption are balanc...; 关键词：differential power analysis（DPA） static random access memory（SRAM） power balance information security

Simulation and research on a 4T-cell based duplication redundancy SRAM for SEU radiation hardening被引量：1: 《Journal of Semiconductors》2015年第11期34-38,共5页洪新红潘立阳张文帝纪冬梅伍冬沈忱许军; A novel 4T-cell based duplication redundancy SRAM is proposed for SEU radiation hardening applications. The memory cell is designed with a 65-nm low leakage process; the operation principle and the SEU radiation harde...; 关键词：SRAM SEE SEU radiation hardening 3-D simulation

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