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STRUCTURES: 作品数：1337被引量：2156H指数：16; 导出分析报告; 相关领域：理学更多>>; 相关作者：周梅素裴浩刘玮李亚红张驰云更多>>; 相关机构：中国科学院东南大学北京大学天津大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划中国博士后科学基金国家教育部博士点基金更多>>

Dynamically Characterizing the Structures of Dirac Points via Wave Packets: 《Chinese Physics Letters》2023年第11期9-13,共5页梁丹丹沈鑫李志; supported by the National Key Research and Development Program of China(Grant No.2022YFA1405300);the National Natural Science Foundation of China(Grant Nos.12074180 and 12104430);the Guangdong Basic and Applied Basic Research Foundation(Grant No.2021A1515012350)。; Topological non-trivial band structures are the core problem in the field of topological materials.We investigate the topological band structure in a system with controllable Dirac points from the perspective of wave ...; 关键词：DIRAC TOPOLOGICAL PARABOLIC

Tuning Thermal Conductivity in Si Nanowires with Patterned Structures: 《Chinese Physics Letters》2021年第2期41-45,共5页Gui-ping Zhu Chang-wei Zhao Xi-wen Wang Jian Wang; Supported by the National Natural Science Foundation of China(Grant No.11875047).; Tuning the thermal conductivity of silicon nanowires(Si-NWs)is essential for realization of future thermoelectric devices.The corresponding management of thermal transport is strongly related to the scattering of phon...; 关键词：NANOWIRES POROSITY CONDUCTIVITY

Topological-Defect-Induced Superstructures on Graphite Surface: 《Chinese Physics Letters》2021年第2期74-77,共4页Zi-Lin Ruan Zhen-Liang Hao Hui Zhang Shi-Jie Sun Yong Zhang Wei Xiong Xing-Yue Wang Jian-Chen Lu Jin-Ming Cai; Supported by the National Natural Science Foundation of China(Grant Nos.11674136 and 61901200);Yunnan Province for Recruiting High-Caliber Technological Talents(Grant No.1097816002);Reserve Talents for Yunnan Young and Middle Aged Academic and Technical Leaders(Grant No.2017HB010);the Yunnan Province Science and Technology Plan Project(Grant No.2019FD041);the China Postdoctoral Science Foundation,and the Yunnan Province Postdoctoral Science Foundation.; Topological defects in graphene induce structural and electronic modulations.Knowing exact nature of brokensymmetry states around the individual atomic defects of graphene is very important for understanding the elect...; 关键词：spectroscopy. STRUCTURES ELECTRONIC

Stable Compositions, Structures and Electronic Properties in K–Ga Systems Under Pressure: 《Chinese Physics Letters》2020年第2期39-42,共4页Chao Wang Yun-Xian Liu Xin Chen Pin Lv Hai-Rui Sun Xiao-Bing Liu; the Shandong-Provincial Science Foundation(ZR2018PA010,ZR2017BA020,ZR2017BA012,ZR2019MA054 and 2019KJJ020);the National Natural Science Foundation of China(11704220,11674122,11804184,1180418 and 11974208).; New stable stoichiometries in K-Ga systems are firstly investigated up to 100 GPa by the unbiased structure searching techniques.Six novel compositions as K4Ga,K3Ga,K2Ga,KGa,KGa2 and KGa4 are found to be thermodynamic...; 关键词：BONDING CHARGE CHAINS

Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements被引量：1: 《Chinese Physics Letters》2017年第9期82-86,共5页Zhi-Fu Zhu He-Qiu Zhang Hong-Wei Liang Xin-Cun Peng Ji-Jun Zou Bin Tang Guo-Tong Du; Supported by the Natural Science Foundation of Jiangxi Province under Grant No 20133ACB20005;the Key Program of National Natural Science Foundation of China under Grant No 41330318;the Key Program of Science and Technology Research of Ministry of Education under Grant No NRE1515;the Foundation of Training Academic and Technical Leaders for Main Majors of Jiangxi Province under Grant No 20142BCB22006;the Research Foundation of Education Bureau of Jiangxi Province under Grant No GJJ14501;the Engineering Research Center of Nuclear Technology Application(East China Institute of Technology)Ministry of Education under Grant NoHJSJYB2016-1; For the frequency range of I kHz-lOMHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage （C-V） and conductance-frequency-voltage （G-f-V） measurements at room temperature. To...; 关键词：GaN Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements NI

External-Strain-Induced Raman Scattering Modification in g-C3N4 Structures: 《Chinese Physics Letters》2015年第10期84-88,共5页李廷会李海涛潘江洪郭俊宏胡芳仁; Supported by the National Natural Science Foundation of China under Grant Nos 61264008 and 61274121;the Natural Science Foundation of Jiangsu Province under Grant No BK2012829; Regulation of optical properties and electronic structure of graphitic carbon nitride （g-C3N4 ） via external strain has attracted much attention due to its potential in photocatalyst and electronic devices. However,...; 关键词：External-Strain-Induced Raman Scattering Modification in g-C3N4 Structures

Au Microdisk-Size Dependence of Quantum Dot Emission from the Hybrid Metal-Distributed Bragg Reflector Structures Employed for Single Photon Sources被引量：1: 《Chinese Physics Letters》2015年第10期134-137,共4页王海艳苏丹杨爽窦秀明朱海军江德生倪海桥牛智川赵翠兰孙宝权; Supported by the National Key Basic Research Program of China under Grant No 2013CB922304;the National Natural Science Foundation of China under Grant Nos 11474275 and 11464034; We investigate metallic microdisk-size dependence of quantum dot （QD） spontaneous emission rate and micro- antenna directional emission effect for the hybrid metM-distributed Bragg reflector structures based on a pa...; 关键词：Au Microdisk-Size Dependence of Quantum Dot Emission from the Hybrid Metal-Distributed Bragg Reflector Structures Employed for Single Photon Sources DBR QDs

Effects of Si δ-Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures被引量：3: 《Chinese Physics Letters》2015年第9期112-115,共4页周书星齐鸣艾立鹍徐安怀汪丽丹丁芃金智; Supported by the National Natural Science Foundation of China under Grant No 61434006; The InGaAs/InAIAs/InP high electron mobility transistor （HEM：F） structures with lattice-matched and pseudo- morphic channels are grown by gas source molecular beam epitaxy. Effects of Si ^-doping condition and grow...; 关键词：InP InGaAs Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures Effects of Si

Structures and Magnetic Properties of Europium-Transition Metal-Gallium Ternary Intermetallic Compounds with 1:3 Type: 《Chinese Physics Letters》2015年第1期158-161,共4页何强郭永权; Supported by the National Natural Science Foundation of China under Grant No 11274110; The crystal structures and magnetic properties of novel Eu TrGa3-r （T=Pd, It, Rh） in termetallic compounds are investigated by using powder x-ray diffraction and magnetic measurements. EuTrGa3-r crystallizes in orth...; 关键词：Pd Ga Structures and Magnetic Properties of Europium-Transition Metal-Gallium Ternary Intermetallic Compounds with 1 Type Eu

A Multiple Resonant Mode Film Bulk Acoustic Resonator Based on Silicon-on-Insulator Structures: 《Chinese Physics Letters》2014年第12期70-73,共4页陈晓杨轶蔡华林周长见 Mohammad Ali MOHAMMAD 任天令; Supported by the National Natural Science Foundation of China under Grant Nos 61025021, 61434001, and 61020106006, the National Key Project of Science and Technology of China under Grant No 2011ZX02403-002, the Special Fund for Agroscientific Research in the Public Interest of China under Grant No 201303107, and the Postdoctoral Fellowship Program of the Natural Sciences and Engineering Research Council of Canada.; With the rapid development of wireless technol- ogy, the demand for integrating multi-band devices has spurred substantial research interest. Research on CMOS compatible radio-frequency （rf） devices has also attract...

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