Mobility is a key parameter in MOSFET (Metal-oxide-semiconduetor field effect transistor) modeling. However, due to the influence of transverse electric field as a result of thin gate-oxide thickness in modern MOSFET,...
In this paper the vertical uniform and nonuniform doping effects for long-channel device (L=2.5μm) of MOSFET are researched where BSIM Model is employed for parameter extraction of doping effects. Further,the descri...