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DESIGN: 作品数：5569被引量：6641H指数：23; 导出分析报告; 相关领域：自动化与计算机技术更多>>; 相关作者：成思源杨雪荣张湘伟陈丽丽靳峰峰更多>>; 相关机构：清华大学东南大学南京航空航天大学浙江大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划中国博士后科学基金更多>>

Design and application of all-fused-ring electron acceptors: 《Journal of Semiconductors》2024年第12期2-5,共4页Kai Xiang Ning Su Jianhua Chen Junqiao Ding; supported by the National Natural Science Foundation of China (52263019);the Yunnan Fundamental Research Projects (202301AT070313).; Near-infrared(NIR)responsive compounds with narrow bandgaps play a crucial role in enhancing the photovoltaic efficiency of organic solar cells(OSCs)by effectively capturing high-energy NIR photons,as well as improvin...; 关键词：FUSED NARROW ELECTRON

GaAs-based resonant tunneling diode:Device aspects from design,manufacturing,characterization and applications: 《Journal of Semiconductors》2023年第10期26-35,共10页Swagata Samanta; This review article discusses the development of gallium arsenide(GaAs)-based resonant tunneling diodes(RTD)since the 1970s.To the best of my knowledge,this article is the first review of GaAs RTD technology which cov...; 关键词：gallium arsenide MICROFABRICATION resonant tunneling devices

Design of CMOS active pixels based on finger-shaped PPD被引量：1: 《Journal of Semiconductors》2020年第10期38-44,共7页Feng Li Ruishuo Wang Liqiang Han Jiangtao Xu; supported by the Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology。; To improve the full-well capacity and linear dynamic range of CMOS image sensor,a special finger-shaped pinned photodiode(PPD)is designed.In terms of process,the first N-type ion implantation of the PPD N buried layer...; 关键词：CMOS active pixel full well capacity full depletion

Design of a 3D Wilkinson power divider using through glass via technology被引量：1: 《Journal of Semiconductors》2018年第12期197-200,共4页Jifei Sang Libo Qian Yinshui Xia Huakang Xia; Projected supported by the National Natural Science Foundation of China(Nos.61771268,61571248,U1709218);the Science and Technology Fund of Zhejiang Province(No.2015C31090);the Natural Science Foundation of Zhejiang(No.LY17F040002);the K.C.Wong Magna Fund in Ningbo University; Due to its low electrical loss and low process cost, a glass interposer has been developed to provide a compelling alternative to the silicon-based interposer for packaging of future 2-D and 3-D ICs. In this study,thr...; 关键词：3D integration glass interposer through glass vias power divider

Approaches to design inorganic semiconductors while maintaining structural motifs: 《Journal of Semiconductors》2018年第7期11-17,共7页Xiuwen Zhang Jianbai Xia; Project supported by the National Natural Science Foundations of China(No.11774239);the Natural Science Foundation of SZU(No.827-000242);the High-End Researcher Startup Funds of SZU(No.848-0000040251);the Supporting Funds from Guangdong Province for 1000 Talents Plan(No.85639-000005); Inorganic semiconductors are the essential constituents of information society, having enabled most of the devices for microelectronics, optoelectronics, new energy technology, healthcare devices, artificial intellige...; 关键词：materials design ternary semiconductors elemental substitution

Comparative analysis of memristor models and memories design被引量：1: 《Journal of Semiconductors》2018年第7期92-103,共12页Jeetendra Singh Balwinder Raj; The advent of the memristor breaks the scaling limitations of MOS technology and prevails over emerging semiconductor devices. In this paper, various memristor models including behaviour, spice, and experimental are i...; 关键词：MEMRISTOR MODELING window function NONLINEAR non-volatile memory

Concept and design of super junction devices被引量：4: 《Journal of Semiconductors》2018年第2期1-12,共12页Bo Zhang Wentong Zhang Ming Qiao Zhenya Zhan Zhaoji Li; The super junction（SJ） has been recognized as the ＂milestone＂ of the power MOSFET, which is the most important innovation concept of the voltage-sustaining layer（VSL）. The basic structure of the SJ is a typical ...; 关键词：super junction silicon limit power semiconductor device design theory

Efficient SRAM yield optimization with mixture surrogate modeling: 《Journal of Semiconductors》2016年第12期64-69,共6页蒋中建叶佐昌王燕; Largely repeated cells such as SRAM cells usually require extremely low failure-rate to ensure a mod- erate chi yield. Though fast Monte Carlo methods such as importance sampling and its variants can be used for yield...; 关键词：yield optimization process variations design variations mixture surrogate model statistical analysis importance sampling

Design of current mirror integration ROIC for snapshot mode operation: 《Journal of Semiconductors》2016年第10期68-74,共7页Hari Shanker Gupta A S Kiran Kumar M.Shojaei Baghini Subhananda Chakrabarti Sanjeev Mehta Arup Roy Chowdhury Dinesh K Sharma; the support extended by Shri Tapan Mishra, Director, Space Applications Centre, Ahmedabad, India;Sensor Development Area, Space Applications Centre, Ahmedabad, India for their support; Current mirror integration（CMI） read out integrated circuit（ROIC） topology provides a low input impedance to photo-detectors and provides large injection efficiency, large charge handling capacity and snapshot mod...; 关键词：pixel pitch readout integrated circuit （ROIC） cryogenics SNAPSHOT FPA IR detectors

Design and performances of a low-noise and radiation-hardened readout ASIC for CdZnTe detectors被引量：1: 《Journal of Semiconductors》2016年第6期177-183,共7页甘波魏廷存高武胡永才; supported by the National Key Scientific Instrument and Equipment Development Project(No.2011YQ040082);the National Natural Science Foundation of China(Nos.11475136,11575144,61176094);the Shaanxi Natural Science Foundation of China(No.2015JM1016); In this paper,we present the design and performances of a low-noise and radiation-hardened front-end readout application specific integrated circuit（ASIC） dedicated to CdZnTe detectors for a hard X-ray imager in spa...; 关键词：CdZnTe detector low-noise front-end readout ASIC X-ray radiation-hardened

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