DETECTIVITY

作品数：31被引量：82H指数：5
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相关作者：尹成芳柯式镇许巍张雷洁陶婕更多>>
相关机构：中国石油大学（北京）信息技术实验室更多>>
相关期刊：《Science China Chemistry》《Science Bulletin》《Defence Technology（防务技术）》《npj Flexible Electronics》更多>>
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Epitaxial quasi-2D/3D hybrid perovskite heterojunctions for photodetector with enhanced detectivity and stability
《Nano Research》2024年第7期6594-6602,共9页Yifu Chen Lin Zhang Xinxin Peng Weiran Qin Shiqing Li Yingwei Wang Zhihui Chen Si Xiao Bin Yang Biao Liu Junliang Yang Han Huang Yun Lin Jun He Liming Ding Yongbo Yuan 
the National Natural Science Foundation of China(Nos.52273202,62104261,51673218,and 62004066);the National Key Research and Development Program of China(No.2022YFB3803300);the Natural Science Program of Xinjiang Uygur Autonomous Region(No.2023D01D03);the Major Scientific and Technological Project of Changsha(No.kq2301002);the Program of Hundreds of Talents of Hunan Province and Changsha Municipal Natural Science Foundation(No.KQ2007027);the National Key Research and Development Program of China(No.2023YFE0116800);the Beijing Natural Science Foundation(No.IS23037).
Although numerous metal halide perovskite materials have been investigated in the field of optoelectronic,the development of perovskite heterojunctions with exotic structures is still rare.Herein,we report the epitaxi...
关键词：epitaxial growth interfacial strain quasi-two-dimensional/three-dimensional(Q-2D/3D)heterojunctions ion inter-diffusion 
Diameter-dependent photoelectric performances of semiconducting carbon nanotubes/perovskite heterojunctions
《Nano Research》2023年第11期12662-12669,共8页Yayang Yu Wenke Wang Xiao Li Linhai Li Shilong Li Xiaojun Wei Weiya Zhou Jing Lin Yang Huang Huaping Liu 
supported by the National Key Research and Development Program of China(Nos.2020YFA0714700 and 2018YFA0208402);the National Natural Science Foundation of China(Nos.51820105002,51872320,51472264,11634014,and 52172060);the Strategic Priority Research Program of the Chinese Academy of Sciences(No.XDB33030100);the Key Research Program of Frontier Sciences,CAS(No.QYZDBSSW-SYS028);the Youth Innovation Promotion Association of CAS(No.2020005).
The heterojunction of single-wall carbon nanotubes(SWCNTs)and perovskite quantum dots(QDs)shows excellent photodetection performances due to the combination of the advantages of high carrier mobility of SWCNTs and hig...
关键词：carbon nanotubes perovskite quantum dots diameter effect RESPONSIVITY DETECTIVITY 
Emerging low-dimensional materials for mid-infrared detection被引量：7
《Nano Research》2021年第6期1863-1877,共15页Jiangbin Wu Nan Wang Xiaodong Yan Han Wang 
the support from Army Research Office(No.W911NF1910111).
Mid-infrared(IR)detectors based on the emerging low-dimensional(two-dimensional and quasi one-dimensional)materials offer unique characteristics including large bandgap tunability,optical polarization sensitivity and ...
关键词：mid-infrared detector ANISOTROPY LOW-DIMENSIONAL GAIN DETECTIVITY 
In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity被引量：21
《Nano Research》2019年第1期183-189,共7页Ranran Zhuo Longhui Zeng Huiyu Yuan Di Wu Yuange Wang Zhifeng Shi Tingting Xu Yongtao Tian Xinjian Li Yuen Hong Tsang 
the National Natural Science Foundation of China(Nos.61605174 and 61774136);the Key Projects of Higher Education in Henan Province(No.17A140012);Research Grants Council,University Grants Committee(RGC,UGC)(GRF 152109/16E PolyU B-Q52T).
The research of ultraviolet photodetectors(UV PDs)have been attracting extensive attention,due to their important applications in many areas.In this study,PtSe2/GaN heterojunction is in-situ fabricated by synthesis of...
关键词：PtSe2 HETEROJUNCTION deep ULTRAVIOLET PHOTODETECTORS SELF-POWERED 
Interfacial state induced ultrasensitive ultraviolet light photodetector with resolved flux down to 85 photons per second被引量：1
《Nano Research》2015年第4期1098-1107,共10页Yong-Qiang Yu Lin-Bao Luo Ming-Zheng Wang Bo Wang Long-Hui Zeng Chun-Yan Wu Jian-Sheng Jie Jian-Wei Liu Li Wang Shu-Hong Yu 
We present an ultrasensitive ultraviolet （UV） detector based on a p-type ZnS nanoribbon （NR）/indium tin oxide （ITO） Schottky barrier diode （SBD）. The device exhibits a pseudo-photovoltaic behavior which can al...
关键词：II-VI group DETECTIVITY Schottky barrier diode optoelectronic device interfacial states 
High-detectivity InAs nanowire photodetectors with spectral response from ultraviolet to near-infrared被引量：12
《Nano Research》2013年第11期775-783,共9页Zhe Liu Tao Luo Bo Liang Gui Chen Gang Yu Xuming Xie Di Chen Guozhen Shen 
Acknowledgements This work was supported by the National Natural Science Foundation （Nos. 91123008, 51002059, 21001046）, the 973 Program of China （No. 2011CB933300）, and the Program for New Century Excellent Talents of the Universities in China （grant No. NCET-11-0179）. We thank the Analytical and Testing Center of Huazhong University of Science and Technology for measurements.
InAs is a direct, narrow band gap （0.354 eV） material with ultrahigh electron mobility, and is potentially a good optoelectronic device candidate in the wide UV-visible-near-infrared region. In this work we report t...
关键词：InAs nanowire photodetector broad spectra detection UV-visible-NIR 
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