DOPING

作品数:1646被引量:2696H指数:15
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相关作者:李酽张莉李平邓胜华李义宝更多>>
相关机构:中国科学院中国科学技术大学东北师范大学重庆大学更多>>
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相关基金:国家自然科学基金国家重点基础研究发展计划中国博士后科学基金国家高技术研究发展计划更多>>
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  • 期刊=Journal of Semiconductorsx
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Memristive feature and mechanism induced by laser-doping in defect-free 2D semiconductor materials
《Journal of Semiconductors》2024年第7期85-91,共7页Xiaoshan Du Shu Wang Qiaoxuan Zhang Shengyao Chen Fengyou Yang Zhenzhou Liu Zhengwei Fan Lijun Ma Lei Wang Lena Du Zhongchang Wang Cong Wang Bing Chen Qian Liu 
supported by the National Natural Science Foundation of China(Nos.51971070,10974037,and 62205011);the National Key Research and Development Program of China(No.2016YFA0200403);Eu-FP7 Project(No.247644);CAS Strategy Pilot Program(No.XDA 09020300);Fundamental Research Funds for the Central Universities(No.buctrc202122);the Open Research Project of Zhejiang province Key Laboratory of Quantum Technology and Device(No.20220401);the Open Research Project of Special Display and Imaging Technology Innovation Center of Anhui Province(No.2022AJ05001);funded by the Ph.D Foundation of Hebei University of Water Resources and Electric Engineering(No.SYBJ2202);Funded by Science and Technology Project of Hebei Education Department(No.BJK2022027)。
Memristors as non-volatile memory devices have gained numerous attentions owing to their advantages in storage,in-memory computing, synaptic applications, etc. In recent years, two-dimensional(2D) materials with moder...
关键词:2D-material memristor laser doping laser direct writing memristive mechanism 
Progress in efficient doping of Al-rich AlGaN
《Journal of Semiconductors》2024年第2期10-20,共11页Jiaming Wang Fujun Xu Lisheng Zhang Jing Lang Xuzhou Fang Ziyao Zhang Xueqi Guo Chen Ji Chengzhi Ji Fuyun Tan Xuelin Yang Xiangning Kang Zhixin Qin Ning Tang Xinqiang Wang Weikun Ge Bo Shen 
This work was supported by the National Key Research and Development Program of China(No.2022YFB3605100);the National Natural Science Foundation of China(Nos.62234001,61927806,61974002,62135013,and 62075081);the Key-Area Research and Development Program of Guangdong Province(No.2020B010172001);the Major Scientific and Technological Innovation Project(MSTIP)of Shandong Province(No.2019JZZY010209).
The development of semiconductors is always accompanied by the progress in controllable doping techniques.Taking AlGaN-based ultraviolet(UV)emitters as an example,despite a peak wall-plug efficiency of 15.3%at the wav...
关键词:AlGaN-based UV-LEDs Al-rich AlGaN DOPING 
Doping organic hole-transport materials for high-performance perovskite solar cells
《Journal of Semiconductors》2023年第2期4-8,共5页Dongmei He Shirong Lu Juan Hou Cong Chen Jiangzhao Chen Liming Ding 
supported by the National Natural Science Foundation of China(62274018);the Fundamental Research Funds for the Central Universities(2020CDJ-LHZZ-074);the Natural Science Foundation of Chongqing(cstc2020jcyj-msxmX0629);the Support Plan for Overseas Students to Return to China for Entrepreneurship and Innovation(cx2020003);L.Ding thanks the National Key Research and Development Program of China(2022YFB3803300);the open research fund of Songshan Lake Materials Laboratory(2021SLABFK02);the National Natural Science Foundation of China(21961160720).
Single-junction and tandem perovskite solar cells(PSCs)have achieved impressive power conversion efficiencies(PCEs)of 25.7%and 31.3%,respectively,which makes it to be one of next-generation photovoltaic technologies[1...
关键词:STABILITY PEROVSKITE accomplished 
Emitter layer optimization in heterojunction bifacial silicon solar cells
《Journal of Semiconductors》2022年第12期65-71,共7页Adnan Shariah Feda Mahasneh 
Silicon solar cells continue to dominate the market,due to the abundance of silicon and their acceptable efficiency.The heterojunction with intrinsic thin layer(HIT)structure is now the dominant technology.Increasing ...
关键词:HIT solar cells bifacial solar cells nano-crystalline silicon films gradient doping parameter optimization 
(Ba_(1−x)Na_(x))F(Zn_(1−x)Mn_(x))Sb: A novel fluoride-antimonide magnetic semiconductor with decoupled charge and spin doping被引量:2
《Journal of Semiconductors》2022年第11期38-43,共6页Xueqin Zhao Jinou Dong Licheng Fu Yilun Gu Rufei Zhang Qiaolin Yang Lingfeng Xie Yinsong Tang Fanlong Ning 
The work was supported by the Key R&D Program of Zhejiang Province,China(2021C01002);NSF of China(No.12074333).
We report the successful synthesis and characterization of a novel 1111-type magnetic semiconductor(Ba_(1−x)Na_(x))F(Zn_(1−x)Mn_(x))Sb(0.05≤x≤0.175)with tetragonal ZrSiCuAs-type structure,which is isostructural to t...
关键词:magnetic semiconductors ferromagnetic interaction carriers SPIN-GLASS 
(Ca,K)(Zn,Mn)_(2)As_(2):Ferromagnetic semiconductor induced by decoupled charge and spin doping in CaZn_(2)As_(2)被引量:1
《Journal of Semiconductors》2022年第7期78-83,共6页Jinou Dong Xueqin Zhao Licheng Fu Yilun Gu Rufei Zhang Qiaolin Yang Lingfeng Xie Fanlong Ning 
supported by the Key R&D Program of Zhejiang Province, China (2021C01002);NSF of China (No. 12074333)。
We have successfully synthesized a novel diluted magnetic semiconductor(Ca_(1−2x)K_(2x))(Zn_(1−x)Mn_(x))_(2)As_(2) with decoupled charge and spin doping.The substitutions of(Ca^(2+),K^(+))and(Zn^(2+),Mn^(2+))in the pa...
关键词:CaZn_(2)As_(2) ferromagnetic ordering Curie temperature diluted magnetic semiconductor 
Efficient p-type doping in ultra-wide band-gap nitrides using non-equilibrium doping method
《Journal of Semiconductors》2021年第6期11-12,共2页Jianbai Xia 
Al-rich nitride,as one of the most important ultra-wide band-gap(UWBG)semiconductors,currently plays the key role of deep ultraviolet(DUV)optoelectronics and potentially possesses the advantages of the huge global inv...
关键词:DOPING ULTRAVIOLET BAND 
Energy band adjustment of 808 nm GaAs laser power converters via gradient doping
《Journal of Semiconductors》2021年第3期73-79,共7页Yingjie Zhao Shan Li Huixue Ren Shaojie Li Peide Han 
This work was supported by the National Key R&D Program of China(No.2018YFB1500500);also supported by Ally Fund of Chinese Academy of Sciences(No.Y072051002).
The gradient doping regions were employed in the emitter layer and the base layer of GaAs based laser power converters(LPCs).Silvaco TCAD was used to numerically simulate the linear gradient doping and exponential gra...
关键词:gradient doping laser power converters(LPCs) energy band adjustment numerical simulation 
Mo5+ doping induced interface polarization for improving performance of planar perovskite solar cells
《Journal of Semiconductors》2020年第5期78-85,105-106,共8页Yurong Jiang Yue Yang Yiting Liu Shan Yan Yanxing Feng Congxin Xia 
supported by Colleges Universities in Henan Province Key Scientific Research Project Funding Scheme(No.17A140020);Henan Province Nature Science Foundation Project(No.182300410241);Chinese Nature Science Foundation Committee(No.61640406).
In this paper,we investigate how interface-induced polarization affects the photovoltaic performance of hybrid perovskite solar cell(PSC)devices.The polarization of the hole transport layer(HTL)is regulated through in...
关键词:CONDUCTIVITY HOLE-TRANSPORTING layer dielectric CONSTANT POLARIZATION 
Improved efficiency and photo-stability of methylamine-free perovskite solar cells via cadmium doping
《Journal of Semiconductors》2019年第12期87-91,共5页Yong Chen Yang Zhao Qiufeng Ye Zema Chu Zhigang Yin Xingwang Zhang Jingbi You 
supported by National Natural Science Foundation of China (Grant Numbers : 61634001, 61574133)
Although perovskite solar cells containing methylamine cation can show high power conversion efficiency,stability is a concern.Here,methylamine-free perovskite material Csx FA1–x PbI3 was synthesized by a one-step me...
关键词:methylamine-free photo-stability lattice strain cadmium doping 
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