Project supported by the National Natural Science Foundation of China(Grant Nos.11374174,51390471,51527803,and 51701143);the National Basic Research Program of China(Grant No.2015CB654902);the National Key Research and Development Program of China(Grant No.2016YFB0700402);the Foundation for the Author of National Excellent Doctoral Dissertation,China(Grant No.201141);the Tianjin Municipal Education Commission,China;the Tianjin Municipal Science and Technology Commission,China;the Fundamental Research Fund of Tianjin University of Technology
Bilayer graphene quantum dots with rotational stacking faults(RSFs) having different rotational angles were studied.Using the first-principles calculation, we determined that these stacking faults could quantitatively...
supported by the National Key research and Development Program of China (No. 2016YFB0401701);the 973 Program of China (No. 2014CB643503);the National Natural Science Foundation of China (NSFC, Nos. 21773088, 51425303);JLU Science and Technology Innovative Research Team (No. 2017TD06);National Postdoctoral Program for Innovative Talents(No. BX201700099);the China Postdoctoral Science Foundation(No. 2017M621207);the Special Project from Ministry of Science and Technology of the People's Republic of China
During the past three decades, metal selenide and telluride quantum dots (QDs) have been deemed one of the most vital nanomaterials in virtue of their extensive applications, including lighting, solar harvesting,photo...
supported by the National Program on Key Basic Research Project(973 Program)(No.001CB610601)
Co/Pt multilayer dots arrays with 580-nm periodicity were fabricated using Laser interference lithography(LIL)and an ion-beam milling technique.We obtained uniform dots arrays with a large area by optimizing the expos...
partially supported by the National Key Basic Research Program 973 (2013CB328804, 2013CB328803);the National High-Tech R&D Program 863 of China (2012AA03A302, 2013AA011004);the National Natural Science Foundation Project (51120125001, 61271053, 61306140, 61405033, 91333118, 61372030, 61307077 and 51202028);the Beijing Natural Science Foundation (4144076);the China Postdoctoral Science Foundation (2013M530613 and 2015T80080);the Natural Science Foundation Project of Jiangsu Province (BK20141390, BK20130629, and BK20130618);the Scientific Research Department of Graduate School in Southeast University
In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of Cd Se...
the National Basic Research Program of China (973 Program, 2013CB834704 and 2011CB503700);the National Natural Science Foundation of China (61275190)
2,3-Bis(4-(phenyl(4-(1,2,2-triphenylvinyl)phenyl)amino)phenyl) fumaronitrile (TPE-TPA-FN or TTF), which possesses aggregation-induced emission (AIE) characteristic, is doped in organically modified silica (ORMOSIL) na...
Supported by the National Basic Research Program of China under Grant No 2010CB934402;the National Natural Science Foundation of China under Grant Nos 61071008,10974091,and 60976001;the Fundamental Research Funds for the Central Universities under Grant Nos 1095021030,1116021004,and 1114021005.
An nc-Si floating gate MOS structure is fabricated by thermal annealing of SiN_(x)/a-Si/SiO_(2).There are nc-Si dots isolated by a-Si due to partial crystallization.Conductance-voltage(G–V)measurements are performed ...
Supported by the National Basic Research Program of China under Grant Nos 2011CB301902 and 2011CB301903;the National High Technology Research and Development Program of China under Grant Nos 2007AA05Z429 and 2008AA03A194;the National Natural Science Foundation of China under Grant Nos 60723002,50706022,60977022 and 51002085;Beijing Natural Science Foundation(No 4091001);the Industry,Academia and Research Combining and Public Science and Technology Special Program of Shenzhen(No 08CXY-14).
Photocatalysis of InGaN nanodots grown on GaN/sapphire templates by metal organic vapor phase epitaxy is studied.Photodegradation of methylene orange by InGaN nanodots responsive to visible light is observed.Analysis ...
supported by the National Natural Science Foundation of China (Grant Nos. 50572120 and 50972032);the National High Technology Research and Development Program of China (Grant Nos. 2009AA033101 and 2009AA03Z407);the National Basic Research Program of China (Grant No. 2010CB327501)
A method of suppressing the multimodal size distribution of InAs/GaAs quantum dots(QDs) using molecular beam epitaxy through flattening the substrate surface is reported in this work.It is found that the surface rough...
Project(2006CB601005) supported by the National Basic Research Program of China;project(200331) supported by the National Excellent Doctoral Dissertations of China;project(Q5009001200801) supported by the Post-Doctoral Science and Technology Foundation from Beijing University of Technology
Poly(organophosphazenes) have potential applications in making water-soluble and biocompatible quantum dots (QDs) due to their wide variety of properties. The CdSe QDs of green emission and the core-shell CdSe/ZnS QDs...
Phonon modes in spherical Si quantum dots (QDs) with up to 7.9 nm in diameter are calculated by using the projection operators of the group theory into valence force field model. The phonons of dot modes in each of fi...