DOUBLE

作品数:2576被引量:4011H指数:20
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  • 期刊=Journal of Semiconductorsx
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A deep trench super-junction LDMOS with double charge compensation layer被引量:2
《Journal of Semiconductors》2022年第10期103-108,共6页Lijuan Wu Shaolian Su Xing Chen Jinsheng Zeng Haifeng Wu 
A deep trench super-junction LDMOS with double charge compensation layer(DC DT SJ LDMOS)is proposed in this paper.Due to the capacitance effect of the deep trench which is known as silicon-insulator-silicon(SIS)capaci...
关键词:double charge compensation layer super-junction deep trench SIS capacitance 
Double-balanced mixer based on monolayer graphene fieldeffect transistors
《Journal of Semiconductors》2022年第5期79-83,共5页Min Wu Weida Hong Guanyu Liu Jiejun Zhang Ziao Tian Miao Zhang 
National Natural Science Foundation of China(Grant Nos.51925208,61974157,61851401,62122082);Key Research Project of Frontier Science,Chinese Academy of Sciences(QYZDB-SSW-JSC021);Strategic Priority Research Program(B)of the Chinese Academy of Sciences(XDB30030000);National Science and Technology Major Project(2016ZX02301003);Science and Technology Innovation Action Plan of Shanghai Science and Technology Committee(20501130700);Science and Technology Commission of Shanghai Municipality(19JC1415500)。
Graphene field-effect transistors(GFET) have attracted much attention in the radio frequency(RF) and microwave fields because of its extremely high carrier mobility. In this paper, a GFET with a gate length of 5 μm i...
关键词:GFET MIXER RF SIMULATION IIP3 
Tuning the bandgap of double perovskites
《Journal of Semiconductors》2021年第12期6-8,共3页Yu Zou Wenjin Yu Lixiu Zhang Cuncun Wu Lixin Xiao Liming Ding 
supported by the National Natural Science Foundation of China(61775004,61935016);the National Key Research and Development Program of China(2017YFA0206600);the National Natural Science Foundation of China(51773045,21772030,51922032,21961160720)for financial support.
With great achievements in efficiency,stability,and large-scale preparation of perovskite solar cells(PSCs),the com-mercialization of PSC is ongoing,but there is still an issue on lead toxicity.Although lead content i...
关键词:PEROVSKITE DOUBLE valent 
Performance improvement of light-emitting diodes with double superlattices confinement layer被引量:1
《Journal of Semiconductors》2018年第11期47-50,共4页Cheng Cheng Yan Lei Zhiqiang Liu Miao He Zhi Li Xiaoyan Yi Junxi Wang Jinmin Li Deping Xiong 
Project supported by the National Key Research and Development Program of China(No.2016YFB0400102);the Beijing Municipal Science and Technology Project(Nos.Z161100002116032,D12110300140000);the National Basic Research Program of China(No.2011CB301902);the Guangzhou Science & Technology Planning Project of Guangdong Province,China(Nos.201604016095,201604030035);the Zhongshan Science & Technology Planning Project of Guangdong Province,China(No.2017A1008);the Science & Technology Planning Project of Guangdong Province(No.2015B010112002)
In this study, the effect of double superlattices on GaN-based blue light-emitting diodes(LEDs) is analyzed numerically. One of the superlattices is composed of InGaN/GaN, which is designed before the multiple quantum...
关键词:double superlattices LED GAN 
Modeling of tunneling current density of GeC based double barrier multiple quantum well resonant tunneling diode被引量:1
《Journal of Semiconductors》2018年第10期34-38,共5页Swagata Dey Vedatrayee Chakraborty Bratati Mukhopadhyay Gopa Sen 
supports from B.P.Poddar Institute of Management and Technology(ECE Dept),Kolkata;support by TEQIP-PhaseⅢunder University College of Technology-Calcutta University(UCT-CU)through award of a fellowship
The double barrier quantum well(DBQW) resonant tunneling diode(RTD) structure made of SiGeSn/GeC/SiGeSn alloys grown on Ge substrate is analyzed. The tensile strained Ge(1-z)Cz on Si(1-x-y)GexSny heterostructu...
关键词:DBQW MQW RTD NDR tunneling current density 
Recent progress in Pb-free stable inorganic double halide perovskites被引量:1
《Journal of Semiconductors》2018年第7期18-23,共6页Zhenzhu Li Wanjian Yin 
Although the power conversion efficiency(PCE) of CH3 NH3 PbI3-based solar cells has achieved 22.1%,which is comparable to commercialized thin-film CdTe and Cu(In,Ga)Se2 solar cells, the long-term stability is the ...
关键词:double perovskite solar cell Pb-free 
Room temperature continuous wave operation of quantum cascade laser atλ~9.4μm被引量:1
《Journal of Semiconductors》2018年第3期34-37,共4页Chuncai Hou Yue Zhao Jinchuan Zhang Shenqiang Zhai Ning Zhuo Junqi Liu Lijun Wang Shuman Liu Fengqi Liu Zhanguo Wang 
Project supported by the National Key Research And Development Program(No.2016YFB0402303);the National Natural Science Foundation of China(Nos.61435014,61627822,61574136,61774146,61674144,61404131);the Key Projects of Chinese Academy of Sciences(Nos.ZDRW-XH-2016-4,QYZDJ-SSW-JSC027);the Beijing Natural Science Foundation(No.4162060,4172060)
Continuous wave(CW) operation of long wave infrared(LWIR) quantum cascade lasers(QCLs) is achieved up to a temperature of 303 K. For room temperature CW operation, the wafer with 35 stages was processed into bur...
关键词:quantum cascade laser long wave infrared double-phonon resonance 
Simulation of double junction In0.46Ga0.54N/Si tandem solar cell被引量:1
《Journal of Semiconductors》2017年第4期33-37,共5页M.Benaicha L.Dehimi Nouredine Sengouga 
A comprehensive study of high efficiency In(0.46)Ga(0.54)N/Si tandem solar cell is presented.A tunnel junction(TJ) was needed to interconnect the top and bottom sub-cells.Two TJ designs,integrated within this ta...
关键词:InGaN/Si tandem solar cells tunnel junctions simulation 
A double-stage start-up structure to limit the inrush current used in current mode charge pump
《Journal of Semiconductors》2016年第6期167-176,共10页刘从 来新泉 杜含笑 池源 
supported by the National Natural Science Foundation of China(No.61106026)
A double-stage start-up structure to limit the inrush current used in current-mode charge pump with wide input range,fixed output and multimode operation is presented in this paper.As a widely utilized power source im...
关键词:charge pump current mode inrush current multimode operation double-stage start-up 
Impact of stray charge on interconnect wire via probability model of double-dot system
《Journal of Semiconductors》2016年第2期14-19,共6页陈祥叶 蔡理 曾强 王新桥 
supported by the National Natural Science Foundation of China(No.61172043);the Key Program of Shaanxi Provincial Natural Science for Basic Research(No.2011JZ015)
The behavior of quantum cellular automata (QCA) under the influence of a stray charge is quantified. A new time-independent switching paradigm, a probability model of the double-dot system, is developed. Superiority...
关键词:quantum cellular automata interconnect wire stray charge probability model of double-dot system 
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