EL2

作品数：38被引量：26H指数：3
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相关领域：电子电信医药卫生更多>>
相关作者：杨瑞霞李光平施卫李光平杨锡权更多>>
相关机构：河北工业大学河北工学院中国科学院天津电子材料研究所更多>>
相关期刊：《半导体杂志》《中国中西医结合外科杂志》《固体电子学研究与进展》《Semiconductor Photonics and Technology》更多>>
相关基金：国家自然科学基金河北省自然科学基金河北省科学技术研究与发展计划项目更多>>
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Double Donor Behavior of EL2 Defect in Photoquenching Experiment
《Rare Metals》1998年第2期50-54,共5页周滨 杨锡权 王占国 
The double donor behavior of EL2 defect in SIGaAs was demonstrated by the photoquenching experiment. The experimental method proposed in this work can be used to measure the electrical compensation ratio and estimate ...
关键词：SIGaAs EL2 Photoquenching Compensation ratio 
Relation between EL2 Groupand EL6 Group in SI-GaAs
《Rare Metals》1996年第3期191-195,共5页吴凤美 赵周英 
The annealing behavior for EL2 and EL6 groups as dominant deep levels in semi-insulating GaAs was presented using Photo Induced Transient Spectroscopy measurement (PITS). During rapid thermal annealing, a relation was...
关键词：ANNEALING Crystal defects Electron energy levels Silicon on insulator technology SPECTROMETRY 
Investigation　of　EL2　Defect　in　10　MeV　Electron　Irradiated　Undoped　Semi－insulating　LEC　GaAs
《Rare Metals》1995年第4期249-252,共4页吴凤美 施毅 陈武鸣 吴红卫 赖启基 赵周英 
The induces defects and especially the EL2 defect in 10 MeV electron irradiated undoped semi-insulating(SI) LEC GaAs samples were investigated by using optical transient current spectroscopy (OTCS)technique.The resul...
关键词：Undoped SI-GaAs EL2 OTCS technique 10 MeV electron irra-diation 
Spatial Distribution of EL2 Defect in Semi-insulating GaAs
《Rare Metals》1994年第4期296-298,共3页汝琼娜 李光平 何秀坤 
It has advantages of accuracy, rapidity and non-destruction that EL2 distribution in semi-insulating LECGaAs crystal has been measured by near infrared absorption method with a high spatial resolution. Now EL2defect e...
关键词：EL2defect SI-GAAS Infrared absorption 
Correlation between the Concentrations of 　Ionized EL2 and Carbon Acceptor in Undoped Semi－insulating LEC GaAs
《Rare Metals》1994年第2期113-117,共5页杨瑞霞 李光平 
Undoped semi-insulating (SI) LEC GaAs samples were investigated. The concentrations of ionized EL2and carbon acceptor were measured by multiple wavelength infrared absorption and local vibrational modeinfrared absorpt...
关键词：Infrared absorption EL2 Carbon acceptor SI-GAAS 
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