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Low voltage floating gate MOSFET based current differencing transconductance amplifier and its applications: 《Journal of Semiconductors》2018年第9期22-28,共7页Charu Rana Dinesh Prasad Neelofar Afzal; This article presents a low voltage low power configuration of current differencing transconductance amplifier（CDTA）based on floating gate MOSFET.The proposed CDTA variant operates at lower supply voltage±1.4 V wit...; 关键词：floating gate MOSFET current differencing transconductance amplifier low voltage low power

Reliability evaluation of high-performance,low-power FinFET standard cells based on mixed RBB/FBB technique: 《Journal of Semiconductors》2017年第4期51-57,共7页Tian Wang Xiaoxin Cui Yewen Ni Kai Liao Nan Liao Dunshan Yu Xiaole Cui; Project supported by the National Natural Science Foundation of China(No.61306040);the State Key Development Program for Basic Research of China(No.2015CB057201);the Beijing Natural Science Foundation(No.4152020);Natural Science Foundation of Guangdong Province,China(No.2015A030313147); With shrinking transistor feature size,the fin-type field-effect transistor（FinFET） has become the most promising option in low-power circuit design due to its superior capability to suppress leakage.To support the ...; 关键词：reliability FinFET standard cell low power VLSI

6T SRAM cell analysis for DRV and read stability: 《Journal of Semiconductors》2017年第2期73-79,共7页Ruchi S.Dasgupta; The present paper analyzes the hold and read stability with temperature and aspect ratio variations. To reduce the power dissipation, one of the effective techniques is the supply voltage reduction. At this reduced su...; 关键词：DRV SRRV WRRV data retention leakage reduction low power SRAM sensitivity analysis

Novel design techniques for noise-tolerant power-gated CMOS circuits被引量：1: 《Journal of Semiconductors》2017年第1期106-112,共7页Rumi Rastogi Sujata Pandey; In this paper we have investigated the single phase sleep signal modulation technique,step-wise V_（gs）technique and the three-phase reactivation technique to evaluate the noise characteristics of multi-threshold CMO...; 关键词：MTCMOS noise tolerant low power

Design of replica bit line control circuit to optimize power for SRAM: 《Journal of Semiconductors》2016年第12期70-75,共6页汪鹏君周可基张会红龚道辉; Project supported by the Zhejiang Provincial Natural Science Foundation of China(No.LQ14F040001);the National Natural Science Foundation of China(Nos.61274132,61234002,61474068);the K.C.Wong Magna Fund in Ningbo University; A design of a replica bit line control circuit to optimize power for SRAM is proposed. The proposed design overcomes the limitations of the traditional replica bit line control circuit, which cannot shut off the word ...; 关键词：low power static random access memory （SRAM） replica bit line control circuit circuit design

A1V 186-μW 50-MS/s 10-bit subrange SAR ADC in 130-nm CMOS process: 《Journal of Semiconductors》2016年第7期124-130,共7页余明元李婷杨家琪张双双林福江贺林; Project supported by the National Natural Science Foundation of China(Nos.61204033,61331015);the Fundamental Research Funds for the Central Universities(No.WK2100230015);the Funds of Science and Technology on Analog Integrated Circuit Laboratory(No.9140C090111150C09041); This paper presents a 10-bit 50-MS/s subrange successive-approximation register （SAR） analog-to- digital converter （ADC） composed of a 4-bit SAR coarse ADC and a 6-bit SAR fine ADC. In the coarse ADC, multi- compa...; 关键词：SAR ADC low power high speed subrange modified SAR logic

A novel sub 20 nm single gate tunnel field effect transistor with intrinsic channel for ultra low power applications被引量：1: 《Journal of Semiconductors》2016年第5期30-34,共5页Pranav Kumar Asthana Yogesh Goswami Bahniman Ghosh; We propose a nanoscale single gate ultra thin body intrinsic channel tunnel field effect transistor using the charge plasma concept for ultra low power applications. The characteristics of TFETs （having low leakage）...; 关键词：band-to-band tunneling （BTBT） tunnel field effect transistor （TFET） junctionless tunnel field effecttransistor （JLTFET） ION/IOFF ratio low power

An 8.12 μW wavelet denoising chip for PPG detection and portable heart rate monitoring in 0.18 μm CMOS被引量：1: 《Journal of Semiconductors》2016年第5期104-109,共6页李响张旭李鹏胡晓晖陈弘达; A low power wavelet denoising chip for photoplethysmography （PPG） detection and portable heart rate monitoring is presented. To eliminate noise and improve detection accuracy, Harr wavelet （HWT） is chosen as the p...; 关键词：low power wavelet denosing PPG detection portable heart rate monitoring

A low power CMOS VCO using inductive-biasing with high performance FoM: 《Journal of Semiconductors》2016年第4期100-105,共6页刘伟豪黄鲁; Project supported by the National Science and Technology Major Project of China(No.2011ZX03004-002-01); A novel voltage-controlled oscillator（VCO） topology with low voltage and low power is presented. It employed the inductive-biasing to build a feedback path between the tank and the MOS gate to enhance the voltage ga...; 关键词：low power inductive-biasing feedback path phase noise voltage controlled oscillators（VCO）

High-speed low-power voltage-programmed driving scheme for AMOLED displays被引量：1: 《Journal of Semiconductors》2015年第12期135-142,共8页夏兴衡吴为敬宋小峰李冠明周雷张立荣徐苗王磊彭俊彪; supported by the State Key Development Program for Basic Research of China(No.2015CB655000);the National Natural Science Foundation of China(Nos.61204089,61306099,61036007,51173049;U1301243);the Fundamental Research Funds for the Central Universities(Nos.2013ZZ0046,2014ZZ0028); A new voltage-programmed driving scheme named the mixed parallel addressing scheme is presented for AMOLED displays, in which one compensation interval can be divided into the first compensation frame and the conseque...; 关键词：active-matrix organic light-emitting diode （AMOLED） low power pixel circuit mixed parallel addressing

LOW_POWER