This paper represents current research in low-power Very Large Scale Integration (VLSI) domain. Nowadays low power has become more sought research topic in electronic industry. Power dissipation is the most important ...
The tremendous growth in the field of modern communication and network systems places demands on the security. As the network complexity grows, the need for the automated detection and timely alert is required to dete...
The advanced communication system uses wireless broadband access technologies which provide high speed data connectivity to the subscribers. One of the most popular wireless access technology is Worldwide Interoperabi...
Technology development and continuous down scaling in CMOS fabrication makes Mixed Signal Integrated Circuits (MSIC) more vulnerable to process variation. This paper presents a well defined novel design methodology fo...
In this paper, a novel 10 Transistor Static Random Access Memory (SRAM) cell is proposed. Read and Write bit lines are decoupled in the proposed cell. Feedback loop-cutting with single bit line write scheme is employe...
New low-power Level Shifter (LS) circuit is designed by using sleep transistor with Multi Threshold CMOS (MTCMOS) technique for robust logic voltage shifting from sub-threshold to above- threshold domain. MultiSupply ...
The NoC consists of processing element (PE), network interface (NI) and router. This paper proposes a hybrid scheme for Netwok of Chip (NoC), which aims at obtaining low latency and low power consumption by concerning...
In this paper, a novel voltage controlled oscillator (VCO) with low phase noise, low power consumption and wide tuning range in the industrial, scientific and medical (ISM) band is proposed for communication systems a...
In recent studies, reversible logic has emerged as a great scene of research, having applications in low power CMOS circuits, optical computing, quantum computing and nanotechnology. The classical logic gates such as ...
This paper presents a different approach of Intermediate Frequency (IF) amplifier using 0.18 μm MIETEC technology channel length of MOSFET Darlington transistors. In contrast to Bipolar conventional Darlingtonpair, a...