云南高校图书馆联盟文献共享服务平台- MOS

MOS: 作品数：2837被引量：5069H指数：21; 导出分析报告; 相关领域：电子电信医药卫生更多>>; 相关作者：周晖刘理天李长生李国强陈建敏更多>>; 相关机构：中国科学院清华大学东南大学西安电子科技大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划中央高校基本科研业务费专项资金中国博士后科学基金更多>>

Synergistic SERS effects in organic/MoS_(2) heterojunctions with cavity structure enabling nanoplastics screening and antibiotic adsorption behavior detection: 《Chinese Physics B》2025年第4期567-573,共7页Liqi Ma Abdur Rahim Baiju Lü Muhammad Saleem Xiaoyu Zhang Mingyue Li Muhammad Zahid Mei Liu; Project supported by the National Natural Science Foundation of China(Grant No.12074229).; The detection of nanoplastics(NPs)and their interactions with antibiotics is critical due to their potential environmental and health risks.Traditional detection methods are challenged by the small size and chemical s...; 关键词：synergistic SERS enhancement organic/MoS_(2)composite nanoplastics

Combining machine learning algorithms with traditional methods for resolving the atomic-scale dynamic structure of monolayer MoS_(2) in high-resolution transmission electron microscopy: 《Chinese Physics B》2025年第1期162-170,共9页Yu Meng Shuya Wang Xibiao Ren Han Xue Xuejun Yue Chuanhong Jin Shanggang Lin Fang Lin; financial support from the National Natural Science Foundation of China(Grant No.61971201)。; High-resolution transmission electron microscopy(HRTEM)promises rapid atomic-scale dynamic structure imaging.Yet,the precision limitations of aberration parameters and the challenge of eliminating aberrations in Cs-co...; 关键词：aberration measurement high-resolution transmission electron microscopy feature-extraction networks exit-wave reconstruction monolayer MoS_(2)

Simulation of optical and electrical synaptic functions in MoS_(2)/α-In_(2)Se_(3) heterojunction memtransistors: 《Chinese Physics B》2023年第11期562-569,共8页相韬陈凤翔李晓莉王小东闫誉玲汪礼胜; Project supported by the National Natural Science Foundation of China (Grant No. 51702245)。; Memtransistors combine memristors and field-effect transistors, which can introduce multi-port control and have significant applications for enriching storage methods. In this paper, multilayer α-In2Se3and MoS2were t...; 关键词：α-In_(2)Se_(3) MoS_(2) dual-gate control by electric and light neural synaptic function simulation

SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current: 《Chinese Physics B》2023年第4期657-662,共6页段宝兴罗开顺杨银堂; Project supported in part by the Science Foundation for Distinguished Young Scholars of Shaanxi Province,China(Grant No.2018JC-017);111 Project(Grant No.B12026)。; A novel silicon carbide gate-controlled bipolar field effect composite transistor with poly silicon region(SiC GCBTP)is proposed.Different from the traditional electrode connection mode of SiC vertical diffused MOS(VD...; 关键词：Si C power device on-state current BIPOLAR vertical diffused MOS(VDMOS) insulated gate bipolar transistor(IGBT)

A three-band perfect absorber based on a parallelogram metamaterial slab with monolayer MoS_(2): 《Chinese Physics B》2023年第3期280-285,共6页张雯婧刘青松程波晁明豪徐云宋国峰; the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB43010000);the National Natural Science Foundation of China(Grant Nos.61835011 and 12075244);Key Research Projects of the Frontier Science of the Chinese Academy of Sciences(Grant No.QYZDY-SSW-JSC004);the National Key Research and Development Program of China(Grant No.2020YFB2206103).; As a two-dimensional(2D)material,monolayer MoS2which limits its optical applications has a low absorption efficiency.In this paper,we propose a three-band perfect metamaterial absorber in the visible light range based...; 关键词：METAMATERIAL perfect absorber monolayer MoS_(2) high-order diffraction

Growth behaviors and emission properties of Co-deposited MAPbI_(3) ultrathin films on MoS_(2): 《Chinese Physics B》2023年第1期553-558,共6页游思雯邵子依郭晓蒋俊杰刘金鑫王凯李明君欧阳方平邓楚芸宋飞孙家涛黄寒; Project supported by the National Natural Science Foundation of China (Grant Nos.11874427 and 11804395);the Fundamental Research Funds for the Central Universities of Central South University (Grant No.2020zzts377)。; Hybrid organic–inorganic perovskite thin films have attracted much attention in optoelectronic and information fields because of their intriguing properties. Due to quantum confinement effects, ultrathin films in nm ...; 关键词：MAPbI_(3)/MoS_(2)heterostructure CO-DEPOSITION temperature-dependent photoluminescence growth behavior

MoS_(2)/Si tunnel diodes based on comprehensive transfer technique: 《Chinese Physics B》2023年第1期106-112,共7页朱翊吕红亮张玉明贾紫骥孙佳乐吕智军芦宾; Project supported by the National Natural Science Foundation of China (Grant No.61851405)。; Due to the pristine interface of the 2D/3D face-tunneling heterostructure with an ultra-sharp doping profile, the 2D/3D tunneling field-effect transistor(TFET) is considered as one of the most promising low-power devi...; 关键词：2D/3D heterostructure transfer technique tunnel diode MoS_(2)/Si

High-sensitive phototransistor based on vertical HfSe_(2)/MoS_(2) heterostructure with broad-spectral response被引量：1: 《Chinese Physics B》2022年第12期662-669,共8页Wen Deng Li-Sheng Wang Jia-Ning Liu Tao Xiang Feng-Xiang Chen; Project supported by the National Natural Science Foundation of China(Grant No.51702245);the Fundamental Research Funds for the Central Universities(Grant No.WUT2021III065JC); Van der Waals heterostructures based on the two-dimensional(2D)semiconductor materials have attracted increasing attention due to their attractive properties.In this work,we demonstrate a high-sensitive back-gated pho...; 关键词：HfSe_(2)/MoS_(2)heterostructure PHOTOTRANSISTOR high-sensitive broad-spectral response

Monolayer MoS_(2)of high mobility grown on SiO_(2)substrate by two-step chemical vapor deposition: 《Chinese Physics B》2022年第8期183-189,共7页Jia-Jun Ma Kang Wu Zhen-Yu Wang Rui-Song Ma Li-Hong Bao Qing Dai Jin-Dong Ren Hong-Jun Gao; Project supported by the National Natural Science Foundation of China(Grant No.61888102);the National Natural Science Foundation of China(Grant No.12004417);the National Key Research and Development Program of China(Grant Nos.2018YFA0305800 and 2019YFA0308500);the National Natural Science Foundation of China(Grant No.U2032206);Chinese Academy of Sciences(Grant Nos.XDB36000000,YSBR-003,and 112111KYSB20160061);Strategic Priority Research Program of Chinese Academy of Sciences(CAS)(Grant Nos.XDB30000000 and XDB28000000);Youth Innovation Promotion Association of CAS(Grant No.Y201902);CAS Project for Young Scientists in Basic Research(Grant No.YSBR-003)。; We report a novel two-step ambient pressure chemical vapor deposition(CVD)pathway to grow high-quality Mo S_(2)monolayer on the Si O_(2)substrate with large crystal size up to 110μm.The large specific surface area of...; 关键词：chemical vapor deposition(CVD) scanning tunneling microscope(STM) MoS_(2) transport

Enhanced photoluminescence of monolayer MoS_(2)on stepped gold structure: 《Chinese Physics B》2022年第8期639-644,共6页Yu-Chun Liu Xin Tan Tian-Ci Shen Fu-Xing Gu; Project supported by the China Postdoctoral Science Foundation(Grant No.2020M671168);the National Natural Science Foundation of China(Grant No.62075131)。; Different Mo S_(2)/Au heterostructures can play an important role in tuning the photoluminescence(PL)and optoelectrical properties of monolayer Mo S_(2).Previous studies of PL of Mo S_(2)/Au heterostructures were main...; 关键词：MoS_(2) stepped gold HETEROSTRUCTURES enhanced photoluminescence

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