氮化硅薄膜对晶体硅材料和电池的钝化效果研究  

PASSIVATION EFFECT OF SiNx:H FILM ON CRYSTALLINE SILICON MATERIALS AND SOLAR CELLS

作　　者：龚灿锋[1] 杨德仁[1] 王晓泉[1] 席珍强[1] 汪雷[1] 阙端麟[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《太阳能学报》2005年第5期613-616,共4页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金项目(60225010;50032010)

摘　　要：利用等离子体增强化学气相沉积技术,在P型直拉单晶硅硅片和铸造多晶硅片以及太阳电池的表面上 沉积了非晶氮化硅(a-SiNx:H)薄膜,并研究了氮化硅薄膜对材料少子寿命和太阳电池性能的影响。研究发现: 氮化硅薄膜显著地提高了晶体硅材料中少子寿命,同时多晶硅太阳电池的开路电压有少量提高,短路电流普遍 提高了1mA/cm2,电池效率提高了2％。实验结果表明:氮化硅薄膜不仅具有表面钝化作用,也有良好的体钝化 作用。Amorous silicon-nitride thin films were prepared by the means of PECVD on P-type monocrystalline and cast multiciystalline silicon wafer. It was found through μ-PCD that the minority-carrier lifetime in both materials increased noticeably. In addition, the performance of monocrystalline and multicrystalline silicon solar cells was tested before and after SiNx:H thin film deposition, it was found that the open voltage has been improved, the short current increased by about 1mA/cm2 and that the efficiency inc...

关 键 词：硅 氮化硅 PECVD 太阳电池 少子寿命 

分 类 号：TM914[电气工程—电力电子与电力传动]