掺杂AlGaN/GaN HEMT电流崩塌效应研究  

A Study on Current Collapse Effect in Doped AlGaN/GaN HEMTs

作　　者：李诚瞻[1] 刘键[1] 刘新宇[1] 刘果果[1] 庞磊[1] 陈晓娟[1] 刘丹[1] 姚小江[1] 和致经[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《电子器件》2007年第5期1532-1534,1538,共4页Chinese Journal of Electron Devices

基　　金：国家重点基础研究发展计划资助项目(2002CB311903);中国科学院重点创新资助项目(KGCX2-SW-107)

摘　　要：对不同掺杂浓度AlGaN/GaN HEMTs施加直流偏置应力,研究掺杂AlGaN/GaN HEMTs电流崩塌效应.实验表明,掺杂AlGaN势垒层对器件电流崩塌效应有明显的抑制作用,随着掺杂浓度增加,掺杂对电流崩塌效应的抑制作用越显著.这是因为对于掺杂AlGaN/GaN HEMT,表面态俘获电子将耗尽掺杂AlGaN层,从而能对2DEG起屏蔽作用.AlGaN体内杂质电离后留下正电荷也能进一步屏蔽表面态对沟道2DEG的影响.Current collapse in doped AlGaN/GaN HEMTs has been studied by applying DC bias stress to devices with various doped layer structures,including undoped layer structure.It has been demonstrated that current collapse effect was suppressed effectively in doped structures.And the suppressed effect was more obviously with the increasing of doping concentration.The positive dependence of doping AlGaN layer is due to surface potential fluctuations modulate the doped layer instead of the channel with the doped layer...

关 键 词：GAN HEMT 电流崩塌效应 掺杂 

分 类 号：TN325[电子电信—物理电子学]