SiO_2/6H-SiC界面的物理性质及其辐照特性的研究  

The Study of Physical and Irradiation Properties of SiO_2/SiC Interface

作　　者：廖伟[1] 罗小蓉[1] 廖勇明[1] 洪根深[1] 龚敏[1] 

机构地区：[1]四川大学物理系,成都610064

出　　处：《四川大学学报（自然科学版）》2001年第S1期48-52,共5页Journal of Sichuan University(Natural Science Edition)

摘　　要：在p型及n型 6H -SiC外延衬底上成功地制备了MOS电容 ,通过高频C～V测试 ,研究了SiO2 /SiC系统的物理性质和电学性质 .发现在SiO2 /p -SiC界面存在大量的施主型界面态 ,在p -SiC热氧化生成的SiO2 中有净的正电荷中心 ,而在n -SiC热氧化生成的SiO2 中有净的负电荷中心 .对n -SiC和SiMOS电容进行了γ辐照对比实验 ,证实了n -SiCMOS电容器具有优异的抗辐照性能 .MOS capacitors were fabricated on both p-type and n-type 6H-SiC epilayers.Physical properties were investigated by u sin g high frequency C～V measurements.It was found that donor-type interface states existed near the SiO 2 /SiC interface and positive fixed-charges appeared in SiO 2 layers on p-SiC substrates.Negative fixed charges,however,appeared near the SiO 2 /n-SiC interface.Investigation of gamma-ray irradiation on n-type SiC and Si MOS capacitors were also carried out,which proved ...

关 键 词：6H-SIC MOS电容 Γ辐照 

分 类 号：O472[理学—半导体物理]