Mn掺杂GaN基稀磁半导体材料制备和特性研究  

Study on the Fabrication and Properties of GaN-Based Diluted Magnetic Semiconductors

作　　者：谢自力[1] 张荣[1] 崔旭高[1] 陶志阔[1] 修向前[1] 刘斌[1] 李弋[1] 傅德颐[1] 张曾[1] 宋黎红[1] 崔影超[1] 韩平[1] 施毅[1] 郑有炓[1] 

机构地区：[1]南京大学物理系江苏省光电功能材料重点实验室,南京210093

出　　处：《半导体技术》2008年第S1期150-153,共4页Semiconductor Technology

基　　金：国家"973"重点基础研究项目(2006CB6049);国家"863"高技术研究发展计划(2006AA03A103;2006AA03A118;2006AA03Z411);国家自然科学基金(60721063;60676057;60731160628);江苏省创新学者攀登项目(BK2008019)

摘　　要：利用金属有机物化学气相沉积法在蓝宝石衬底上生长了Mn掺杂GaN基稀磁半导体材料。原子力显微镜研究表明,少量的Mn在样品表面起到活性作用。X射线衍射和喇曼散射研究表明,当Mn的掺杂浓度很低(<2.7%)时并没有观察到第二相的出现,当Mn的掺杂浓度达到3.9%时观察到了第二相。采用光学测试得到了由于Mn杂质引入杂质能级和缺陷而产生一个很宽的发射和吸收谱。The Ga1-xMnxN DMS materials were grown on c-sapphire substrates by metalorganic chemical vapor deposition.Surface structure was characterized by atomic force microscopy and Mn as a surfactant was detected.Crystalline quality was measured by X-ray diffraction and Raman scattering.None of second phases were detected for these samples at low(<2.7%)Mn concentrations,but the second phases were observed when the Mn doping concentration was 3.9%.An emission band and an absorption band were detected by optical measurements methods.They are both attributed to some Mn-related levels.

关 键 词：金属有机物化学气相沉积 稀磁半导体 锰掺杂 X射线衍射 

分 类 号：TN304.055[电子电信—物理电子学]