GaN薄膜材料TEM样品的制备  

TEM Sample Preparation of Thin Films of GaN

作　　者：陈雷英[1] 陈贵锋[1] 赵勇明[1] 白云娜[1] 马晓薇[1] 李养贤[1] 

机构地区：[1]河北工业大学材料学院信息功能材料研究所,天津300130

出　　处：《半导体技术》2008年第S1期161-163,共3页Semiconductor Technology

基　　金：河北省科学技术研究与发展指导计划(07215134);河北省自然科学基金(E2007000119)

摘　　要：研究了采用机械研磨和离子减薄技术制备透射电镜用薄膜样品的方法,介绍了GaN截面TEM样品的制备,发展了供透射电子显微镜(TEM)分析用的"三明治"半导体样品制样技术,并利用扫描电子显微镜(SEM)和透射电子显微镜进行观测,获得了有关半导体GaN材料横截面的薄区图像,加以分析整理从而寻求到了一种透射电镜截面样品的最佳制备工艺。Cross-sectional TEM sample preparation of GaN thin films was prepared with mechanical grinder and precision ion polishing technology.Cross-sectional specimen technology used for TEM analysis was developed.Images about cross-sectional TEM GaN semiconductor were observed and obtained with SEM/TEM.Through cordination and analysis,an optimal process of TEM sample preparation was obtained.

关 键 词：氮化镓 透射电子显微镜 样品制备 薄膜材料 

分 类 号：TB383.2[一般工业技术—材料科学与工程]