分子束外延方法生长p型氧化锌薄膜  

p-type ZnO Thin Films Prepared by Plasma-assisted Molecular Beam Epitaxy

作　　者：矫淑杰[1] 梁红伟[1] 吕有明[1] 申德振[1] 颜建锋[1] 张振中[1] 张吉英[1] 范希武[1] 

机构地区：[1]中国科学院长春光学精密机械与物理研究所激发态物理重点实验室,吉林长春130033

出　　处：《发光学报》2004年第4期460-462,共3页Chinese Journal of Luminescence

基　　金：国家自然科学重点基金 ( 60 3 3 60 2 0 ) ;国家"863"高技术项目 ;新材料领域 ( 2 0 0 1AA3 1112 0 ) ;中国科学院二期创新项目;国家自然科学基金 ( 60 1760 0 3 ;60 2 780 3 1;60 3 760 0 9)资助项目

摘　　要：用等离子辅助分子束外延 (P MBE)的方法 ,在蓝宝石c 平面上外延生长了p型氧化锌薄膜。在实验中采用高纯金属锌作为Zn源、NO作为O源和掺杂源 ,通过射频等离子体激活进行生长。在生长温度 30 0℃ ,NO气体流量为 1.0sccm ,射频功率为 30 0W的条件下 ,获得了重复性很好的p型ZnO ,且载流子浓度最大可达 1.2× 10 19cm-3 ,迁移率为 0 .0 5 35cm2 ·V-1·s-1,电阻率为 9.5Ω·cm。N-doped ZnO thin films are grown by plasma-assisted molecular beam epitaxy (P-MBE) on c-plane sapphire (α-Al_2O_3) using NO as oxygen source and nitrogen dopant. The gas sources were activated by an oxford Applied Research r.f. (13.56 MHz) plasma source with power of 300 W, A Knudsen effusion cell is used to evaporate elemental zinc with 99.9999% purity. During growth, Zn beam pressure was fixed at 4×10^(-4) Pa in the growth chamber and growth temperature kept at 300 ℃. The crystalline quality of ZnO films is characterized by X-ray diffraction, XRD results show that ZnO∶N thin films have wurtzite (002) preferred orientation and the full width at half maximum (FWHM) of p-type ZnO films is broaden clearly comparing with that of undoped ZnO thin films. Optical properties of ZnO∶N thin films were observed by UV absorption spectra. In absorption spectra, the subbandgap formed by N doping in the ZnO band gap. Electrical properties were measured by four-probe Van der Pauw method. Hall effect measurement shows that the grown samples are p-type ZnO with carrier concentration of 1.20×10^(19) cm^(-3) , mobility of 0.0535 cm^2·V^(-1)·s^(-1) and resistivity of 9.50 Ω·cm.

关 键 词：氧化锌薄膜 P型掺杂 一氧化氮 射频等离子体 分了束外延 

分 类 号：O472.3[理学—半导体物理]