氧退火对SiO_2/Si衬底BST薄膜特性的影响  

Influence of Oxygen Annealing on Character of BST Thin Film on SiO_2/Si Substrate

作　　者：陈平[1] 黄美浅[1] 李观启[1] 李斌[1] 陈蒲生[1] 

机构地区：[1]华南理工大学应用物理系,广州510640

出　　处：《固体电子学研究与进展》2004年第3期396-401,共6页Research & Progress of SSE

基　　金：教育部留学回国人员科研启动基金资助项目;华南理工大学自然科学基金资助项目

摘　　要：利用氩离子束镀膜技术和硅平面工艺在经过干氧氧化的硅衬底上制备一层钛酸锶钡薄膜 ,并在氧气中进行不同条件的退火处理 ,然后蒸铝及利用光刻技术制作铝电极而形成 MIOS电容结构 ,研究其物理及电学特性。结果表明 ,氧退火条件对衬底的钛酸锶钡薄膜的物理及电学特性有较为明显的影响。Ba_(1-x)Sr_xTiO_3 (BST) thin films were deposited on SiO_2/Si by using the argon-ion beam sputtering technique and silicon planner process, and annealed in oxygen with different conditions, then the aluminum electrodes were made by using etching technique, based on these processings MIOS structure were finished. We study the film's characters of physics and electric. The result showed that there have obvious effects with characters BST film under different annealing conditions.

关 键 词：钛酸锶钡薄膜 物理特性 电学特性 介电常数 电荷存储 

分 类 号：TN305.8[电子电信—物理电子学]