硅基片上异质外延SiC的机理研究(英文)  

Studies of the Heteroepitaxial SiC Films on the Si Substrates

作　　者：朱俊杰[1] 林碧霞[1] 孙贤开[1] 郑海务[1] 姚然[1] 傅竹西[1] 

机构地区：[1]中国科学技术大学物理系,合肥230026

出　　处：《人工晶体学报》2004年第4期545-548,共4页Journal of Synthetic Crystals

基　　金：theNationalNaturalScienceFoundationofChina (No .90 2 0 1 0 38,50 1 32 0 4 0 )

摘　　要：本文利用低压高温MOCVD系统 ,成功地在Si(111)基片上外延出了具有高质量的SiC薄膜 ,并对其反应机理做了一些初步的研究。大部分观点认为 ,SiC/Si的异质外延 ,其最初的状态应该为Si衬底中Si的扩散。但是 ,本文通过在不同流量比的条件下 ,SiC薄膜在Si基片以及Al2 O3 基片上外延的比较 ,发现在SiC/Si的异质外延过程中起重大作用的并非Si衬底中Si的扩散 ,而是很大程度上作用于C向Si衬底的扩散。同时 ,还发现反应速率的快慢受SiH4流量所限制。当SiH4流量增加时 ,反应速率会明显加快 ,但是结晶质量会相对变差。High-quality SiC films were successfully prepared on Si(111) substrates by low pressure metal-organic chemical vapor deposition (LP-MOCVD). The mechanism of the heteroepitaxial SiC films on the Si substrates was studied. Many researchers supported that the initiative stage was the Si out-diffusion from the Si substrates. But from the experimental results of heteroepitaxial SiC films grown on the Si substrate and Al_2O_3 substrate, respectively,it is found that the dominant transport process during the growth of SiC films on the Si substrates, is the C in-diffusion rather than Si out-diffusion. In addition,the results show that the reaction rate will become faster with the increase of the SiH_4 flux,but the crystallization will be weakened.

关 键 词：硅基片 异质外延 SIC薄膜 SI(111)衬底 低压MOCVD SIH4 碳化硅 硅烷 结晶 

分 类 号：O484[理学—固体物理]