Al、N共掺杂实现ZnO的p型转变及其掺杂机理探讨  

Growth and Characteristics of p-Type ZnO Films Doped with Al and N

作　　者：钱庆[1] 叶志镇[1] 袁国栋[1] 朱丽萍[1] 赵炳辉[1] 

机构地区：[1]浙江大学,硅材料国家重点实验室,浙江杭州310027

出　　处：《真空科学与技术学报》2004年第5期347-349,共3页Chinese Journal of Vacuum Science and Technology

基　　金：国家重点基础研究专项经费"973"(No G2 0 0 0 0 683 ) ;国家自然科学基金重点项目 (No 90 2 0 10 3 8)资助

摘　　要：利用直流反应磁控溅射以Al、N共掺杂的方法生长p -ZnO薄膜。ZnO薄膜沉积于具有不同衬底温度的玻璃或Si衬底上 ,N来自NH3 与O2 的生长气氛 ,Al来源于AlxZn1-x(x =0 0 8% )靶材。利用XRD、XPS、Hall测试对其性能进行了分析。结果表明 ,用Al、N共掺杂的方法可以得到c轴择优取向的p型ZnO薄膜 ,载流子浓度为 (10 14 ～ 10 15)cm-3 ,电阻率为 (1 5 4～3 4 3)× 10 3 Ω·cm ,迁移率为 (1 16～ 4 6 1)cm2 /V·s。由Al、N共掺杂和仅掺N的两种情况下ZnO薄膜的N1s的XPS图谱可以推断出 ,N的掺入可能是以Al-N键的形式存在 ,而且Al的存在促进了N原子作为受主的掺入。p-type,c-axis orientated ZnO films were grown by DC reactive magnetron sputtering and simultaneously doping of Al and N at different temperatures on glass and silicon substrates,respectively.Sputtering gases of high purity NH 3 and O 2 and the target of Al xZn 1-x (x=0.08%) serve as the dopants of Al and N.The films were characterized with X-ray diffraction (XRD),X-ray photoelectron spectroscopy (XPS) and Hall measurements.The results show that high quality p-type ZnO can be grown by simultaneously doping Al and N.The ZnO film displays preferential growth orientation along c-axis with a carrier density of (10 14 ～10 15 ) cm -3 ,a resistivity of (1.54～3.43)×10 3 Ω·cm and a Hall mobility of (1.16～4.61) cm 2/V·s.In comparison of XPS N1s spectra of the N-doped film and the Al and N-doped film,we found that the existence of Al increases the concentration of N impurity,which acts as acceptors and which may form the Al-N bonds.

关 键 词：ZNO薄膜 共掺杂 SI衬底 迁移率 载流子浓度 直流反应磁控溅射 衬底温度 XPS 原子 图谱 

分 类 号：TB43[一般工业技术] O484[理学—固体物理]