n沟VDMOSFET单粒子烧毁的二维数值模拟  

Two-dimensional numerical simulation of the effect of single event burnout for n-channel VDMOSFET

作　　者：郭红霞[1] 陈雨生[1] 张义门[2] 王伟[1] 赵金龙[1] 周辉[1] 

机构地区：[1]西北核技术研究所 [2]西安电子科技大学微电子所,陕西西安710071

出　　处：《核电子学与探测技术》2004年第6期608-611,共4页Nuclear Electronics & Detection Technology

摘　　要：应用半导体器件二维模拟软件Medici对功率MOSFET器件单粒子烧毁SEB(Single EventBurnout)效应开展了理论模拟研究。理论模拟与以往的实验结果比较吻合,证明采取的物理模型的正确性。得到了SEB灵敏度与载流子浓度、基区宽度和发射结掺杂浓度等参数的变化关系,提出了改善SEB的几种加固措施。该模型对于评估器件SEB效应提供了理论方法。2D MEDICI simulator is used to investigate the effect of Single Event Burnout (SEB) for n-channel power VDMOSFETs. The simulation results are consistent with experimental results which have been published. The simulation results are of great interest for a better understanding of the occurrence of events. The effects of the minority carrier lifetime in the base region, the base width and the emitter doping density on SEB susceptibility are verified. Some hardening solutions to SEB are provided. The work shows that the 2D simulator MEDICI is an useful tool for burnout prediction and for the evaluation of hardening solutions.

关 键 词：VDMOSFET 二维数值模拟 发射结 基区 功率MOSFET 半导体器件 理论模拟 单粒子 变化关系 证明 

分 类 号：TL631.24[核科学技术—核技术及应用] TN386[电子电信—物理电子学]