直流磁控反应溅射制备硅基AlN薄膜  

Deposition of AlN Thin Films on Silicon by DC Magnetron Reactive Sputtering

作　　者：于毅[1] 赵宏锦[1] 高占友[1] 任天令[1] 刘理天[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《压电与声光》2005年第1期53-55,共3页Piezoelectrics & Acoustooptics

基　　金：国家"九七三"计划基金资助项目(G1999033105);国家"八六三"计划基金资助项目(2004AA404240)

摘　　要：采用直流磁控反应溅射法,在Si(100)和Pt/Ti/Si(100)上制备了AlN薄膜。用X-射线衍射(XRD)、电镜扫描(SEM)、原子力显微(AFM)对薄膜的晶向结构和表面形貌进行了分析,研究了不同工艺参数对薄膜择优取向的影响,分析了AlN晶粒生长的有关机理。制备出的AlN薄膜显示出较好的(002)面择优取向性,半高宽(FWHM)为0.35°～0.40°,折射率约为2.07。Aluminum nitride (AlN) thin films have been successfully deposited on Si(100) and Pt/Ti/Si(100) by DC magnetron reactive sputtering. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) are used to analyze crystalline orientation and surface morphology of the films. The influence of different technical factors to the film preferential orientation is investigated. The growth mechanism of AlN crystallites is also discussed. These films show a preferred orientation of (002) with a full width at half maximum (FWHM) of 0.35°～0.4°and a refractive index of 2.07.

关 键 词：氮化铝薄膜 直流磁控反应溅射 择优取向 

分 类 号：TN405[电子电信—微电子学与固体电子学]