注硅半绝缘GaAs的深能级  

DEEP LEVELS IN Si-IMPLANTED SEMI-INSULATOR GALLIUM ARSENIDE

作　　者：邱素娟[1] 陈开茅[2] 武兰青[2] 

机构地区：[1]机械电子工业部第十三研究所,石家庄050051 [2]北京大学物理系,北京100871

出　　处：《物理学报》1993年第8期1304-1310,共7页Acta Physica Sinica

基　　金：国家自然科学基金

摘　　要：用深能级瞬态谱(DLTS)详细研究了硅离子注入Liquid-encapsulated Czochralski(缩写为LEC)半绝缘GaAs的深中心。结果表明,在注硅并经高温退火的有源区中观测到4个多子(电子)陷阱,E_(01),E_(02),E_(03)和E_(04)。它们的电子表观激活能分别为0.298,0.341,0.555和0.821eV。其中E_(04)与EL2有关,但不是EL2缺陷。E_(04)的电子俘获截面激活能为0.119eV。还在有源区中观测到3个少子(空穴)陷阱,H_(01),H_(02)和H_(03)。其中H_(03)的空穴表观激活能为0.713eV以及它的浓度约为2.8×10^(16)cm^(-3)。The deep centers in Si-implanted LEC semi-insulator gallium arsenide have been carefully studied using the deep level transient spectroscopy (DLTS) technique. The results are as follows. The four majority carrier traps,E(01) ,E(02),E(03) and E(04) have been observed in the active regions of the Si-implanted LEC semi-insulator gallium arsenide after high temperature an-nealling, and their electron apparent activation energies are 0.298, 0.341, 0. 555 and 0. 821 eV respectively. The E(04) trap is related to the EL2. The activation energy of the electron capture cross section of E(04) is 0. 119 eV Three minority carrier (hole) traps have been newly found in the same active regions. The hole apparent activation energy of the H(03) trap is 0. 713 eV and its concentration is about 2. 8×10_(16)cm-3.

关 键 词：砷化镓 离子注入 深能级 缺陷 

分 类 号：O474[理学—半导体物理]