Al诱导a-Si:H薄膜的晶化  

Al-induced Crystallization of Hydrogenated Amorphous Silicon Films

作　　者：祁菁[1] 金晶[1] 胡海龙[1] 贺德衍[1] 

机构地区：[1]兰州大学物理系,兰州730000

出　　处：《真空科学与技术学报》2005年第1期57-60,共4页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金 (No .10 175 0 3 0 )

摘　　要：采用等离子体化学气相沉积方法在镀Al玻璃及单晶Si衬底上制备了氢化非晶硅 (a Si:H)薄膜 ,研究了样品在不同的热处理过程中Al对其晶化过程的影响。X射线衍射测量发现 ,由于Al的存在使a Si:H的晶化温度大幅度降低 ,并得到了有强烈 (111)结晶取向的多晶Si薄膜。X射线光电子能谱分析表明 ,热处理过程中Al向Si薄膜表面的扩散降低了Si的成核温度。Hydrogenated amorphous silicon (α-Si:H) thin films were deposited on Al-coated glass and Si substrates by plasma-enhanced CVD with SiH4, Ar, and H2 mixtures as a source gas. Influence of Al on the crystallization of α-Si:H was studied during the annealing. The structure of the films was characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (ATM). The results show that polycrystalline Si films with a highly ordered structure and a strong orientation were obtained, and the Al layer significantly decreases the crystallization temperature of α-Si:H films due to the diffusion of Al atoms through the Si film.

关 键 词：A-SI:H薄膜 SI衬底 非晶硅 幅度 等离子体化学气相沉积 晶化 单晶 结晶取向 热处理过程 成核 

分 类 号：TB383[一般工业技术—材料科学与工程] TN141.9[电子电信—物理电子学]