短沟道SOI MOSFET栅结构研究与进展  

Progress in the Development of Gate Structures of Short-Channel SOI MOSFET's

作　　者：曹寒梅[1] 杨银堂[1] 朱樟明[1] 刘莉[1] 

机构地区：[1]西安电子科技大学微电子研究所,陕西西安710071

出　　处：《微电子学》2005年第2期180-184,共5页Microelectronics

基　　金：国家自然科学基金资助项目(90207022)

摘　　要：　系统比较了几种不同栅结构短沟道SOIMOSFET的性能,包括短沟道效应、电流驱动能力、器件尺寸等特性,获得了栅的数目与短沟道SOI器件的性能成正比的结论。介绍了两种新的短沟道SOI器件栅结构:Π栅和Ω栅,指出了短沟道SOIMOSFET栅结构的发展方向。Performances of short-channel SOI MOSFET's with different gate-structures are compared systematically, including short-channel effects, current-drive ability and device scaling. It is concluded that the performance of short-channel SOI MOSFET's is proportional to the number of gates. Two new gate structures, Π-gate and Ω-gate, are introduced. The development trend of short-channel SOI MOSFET's is discussed.

关 键 词：短沟道MOSFET SOI 栅结构 半导体器件 

分 类 号：TN303[电子电信—物理电子学]