微波ECR等离子体辅助磁控溅射沉积装置的研制  

Development of a New Apparatus on Magnetron Sputtering Deposition Assisted by Microwave ECR Plasma

作　　者：王洋[1] 雷明凯 张仲麟 

机构地区：[1]机械工业部沈阳真空技术研究所,大连理工大学

出　　处：《真空》1994年第6期19-23,共5页Vacuum

摘　　要：本文介绍了一种新型的沉积装置──微波ＥＣＲ等离子体辅助磁控溅射沉积装置。通过对装置性能的测试及沉积试验表明，该装置具有与离子束辅助沉积相类似的效果，但与离子束辅助沉积装置相比，该装置提高了成膜的沉积速度，降低了设备成本，为薄膜沉积提出了一条新途径．Abstract In this paper,it is introduced that a new device on magnetron sputtering deposition assistedby ECR plasma.The experimental results have shown that its effect is similar to the effect of deposition assisted by ion beam.But compared with the IAD device,this device can raise the deposition rates of films and decrease the price,and it has been proved that magnetion sputtering deposition assisted by ECR plasma is an effective method for formation of the film.

关 键 词：ECR等离子体 磁控溅射 离子轰击 离子束辅助沉积 

分 类 号：TL628[核科学技术—核技术及应用] O53[理学—等离子体物理]