掺Mo对NiSi薄膜热稳定性的改善  

The improvement of thermal stability in NiSi film by adding Mo

作　　者：黄伟[1] 张利春[1] 高玉芝[1] 金海岩[1] 

机构地区：[1]北京大学微电子研究院,北京100871

出　　处：《物理学报》2005年第5期2252-2255,共4页Acta Physica Sinica

摘　　要：报导了在镍薄膜中掺入少量Mo提高了镍硅化物的热稳定性 .结果表明 ,经 6 5 0— 80 0℃快速热退火形成的Ni(Mo)Si硅化物薄膜电阻值较低 ,约为 2 .4 (Ω/□ ) .XRD分析表明薄膜中只存在NiSi相 ,而没有NiSi2 生成 .由吉布斯自由能理论分析表明在Ni薄膜中掺人 5 .9%Mo对改善Ni硅化物热稳定性起到至关重要的作用 .经 6 5 0— 80 0℃快速热退火后的Ni(Mo)Si/Si肖特基二极管电学特性良好 ,势垒高度ΦB 为 0 .6 4— 0 .6 6eV ,理想因子接近于 1,更进一步证明掺少量的Mo能够改善NiSi薄膜的热稳定性 .A novel silicide technology to improve the thermal stability of the conventional Ni silicide is studied by adding a small quantity of Mo element in Ni flim. The results show that during rapid thermal annealing (RTA) temperature from 650 to 800° C, sheet resistance of Ni(Mo) Si silicide formed is low, whose value is about 2.4(&UOmega;/□). X-ray diffraction (XRD) analysis identifies the existance of NiSi phase and no peak of NiSi2 phase for the above samples. Furthermore, according to the theory on Gibbs free enery, the results show that adding 5.9 atomic % of Mo element can enhance thermal stability of nickel monosilicide. Finally, after annealed at temperatures ranging from 650 to 800° C, Ni ( Mo) Si/Si Schottky barrier diodes (SBDs) are fabricated. Good I-V characteristics of SBD that the range of Schotty barrier height is from 0.64 to 0.66eV and the ideal factor is close to unity are shown. This further proves that the addition of a little amount of Mo in Ni film can improve the thermal stability of the NiSi film.

关 键 词：镍硅化物 快速热退火 硅化镍薄膜 热稳定性 卢瑟福背散射 

分 类 号：O472[理学—半导体物理]