基于FC技术的AlGaN/GaN HEMT  

AlGaN/GaN HEMT on Sapphire Using FC Bonding

作　　者：陈晓娟[1] 刘新宇[1] 邵刚[1] 刘键[1] 和致经[1] 汪锁发[1] 吴德馨[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《Journal of Semiconductors》2005年第5期990-993,共4页半导体学报（英文版）

基　　金：国家重点基础研究发展规划(批准号:2002CB311903);中国科学院重点创新(批准号:KGCX2 SW 107)资助项目 ~~

摘　　要：采用FC技术将管芯倒扣至AlN基板散热的AlGaN/GaN HEMTs,并通过热阻模型分析了FC方式的散热机理.从测试结果看,器件的热阻可大幅降到14 .9K·mm/W,直流特性明显增加,饱和电流提高33%.表明采用FC技术有效改善了器件散热,而且引入的寄生电感较小,可获得更大输出功率.如果进一步完善频率特性的优化,可以加快FC技术的AlGaN/GaN大功率HEMT器件的实用化进程.AlGaN/GaN HEMT grown on sapphire substrates using FC bonding for heat dissipation is demonstrated and the mechanism of FC bonding is discussed.A model based on thermal impedance is used to analyze the heat which is dissipated by FC bonding.The tested result shows,after FC,a much reduced thermal impedance of 14.9W/(cm·K),and a increased saturation current from 300mA/mm to 396mA/mm are obtained.Source-drain current drop in high DC power is not obviously observed in FC FET.So the AlGaN/GaN HEMT using FC bonding has good heat-dissipation performance and large output power.

关 键 词：ALGAN/GAN HEMT FC 倒扣 热阻 

分 类 号：TN304[电子电信—物理电子学]