分子束外延生长的(GaAs_(1-x)Sb_x In_yGa_(1-y)As)GaAs量子阱光致发光谱研究  

Photoluminescence study of (GaAs_(1-x)Sb_x In_yGa_(1-y)As)GaAs bilayer quantum well grown by molecular beam epitaxy

作　　者：徐晓华[1] 牛智川[1] 倪海桥[1] 徐应强[1] 张纬[1] 贺正宏[1] 韩勤[1] 吴荣汉[1] 江德生[1] 

机构地区：[1]中国科学院半导体研究所超晶格与微结构国家重点实验室,北京100083

出　　处：《物理学报》2005年第6期2950-2954,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:90201026;60137020);863计划资助;中国博士后科学基金支持的课题.~~

摘　　要：报道了(GaAs1-xSbx InyGa1-yAs)GaAs量子阱结构的分子束外延生长与光致发光谱研究结果.变温与变激发功率光致发光谱的研究表明了此结构为二型量子阱发光性质.讨论了光谱双峰结构的跃迁机制.通过优化生长条件,获得了室温1.31μm发光.Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum wells (BQWs) grown by molecular beam epitaxy (MBE) were carried out. Temperature and excitation power dependent photoluminescence (PL) study indicated that the band alignment of the BQWs is type - II. The origin of the double-peak luminescence was discussed. Under optimized growth conditions, the PL emission wavelength from the BQWs has been extend up to 1.31 mu m with a single peak at room temperature.

关 键 词：分子束外延 量子阱 二型发光 砷化镓半导体 

分 类 号：O471.1[理学—半导体物理]