Si掺杂的AlGaInP/GaInP多量子阱光学特性  

Optical characteristics of AlGaInP/GaInP multiple quantum wells with Si-doping

作　　者：谭春华[1] 范广涵[1] 李述体[1] 周天明[1] 黄琨[1] 雷勇[1] 

机构地区：[1]华南师范大学光电子材料与技术研究所,广东广州510631

出　　处：《量子电子学报》2005年第3期436-439,共4页Chinese Journal of Quantum Electronics

基　　金：广州市科技重点计划项目(1999-2-035-1)资助

摘　　要：低压MOCVD方法生长了掺Si与不掺Si的AlGaInP/GaInP多量子阱结构,运用X射线双晶衍射与光荧光技术研究了掺Si对量子阱性能的影响。测试结果表明掺Si使量子阱的生长速度增加,掺Si量子阱的光荧光强度比未掺Si量子阱的光荧光强度改善了一个数量级。AlGaInP:Si/GaInP:Si and AlGaInP/GaInP multiple quantum well structures were grown by low pressure metalorganic chemical vapor deposition. The effect of Si-doping on the characteristics of AlGalnP/GalnP multiple quantum wells was studied by using double crystal X-ray diffraction and photoluminescence. The results show that the growth rate of MQW increases with Si-doping and the intensity from MQW with Si-doped was approximately one order pf magnitude stronger than that of undoped MQW.

关 键 词：光电子学 X射线双晶衍射 金属有机化学气相沉积 量子阱 光荧光 

分 类 号：O472.3[理学—半导体物理]