在双热舟化学气相沉积系统中通过掺In技术生长GaN纳米线和纳米锥  

Synthesis of GaN nanowires and nano-pyramids in a two-hot-boat chemical vapor deposition system via an In-doping technique

作　　者：刘仕锋[1] 秦国刚[1] 尤力平[1] 张纪才[2] 傅竹西[3] 戴伦[1] 

机构地区：[1]北京大学物理学院,北京100871 [2]中国科学院半导体研究所,北京100083 [3]中国科学技术大学物理系,合肥230027

出　　处：《物理学报》2005年第9期4329-4333,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10374004;90201037;50172001);集成光电子国家重点实验室和国家纳米科学中心资助的课题.~~

摘　　要：在现有的一台蒸发镀膜机基础上,设计加工了一个双热舟化学气相沉积系统.该系统具有真空度高、升温速度快、源和衬底温度可分别控制等优点,有利于化合物半导体纳米材料的生长.利用该生长系统,通过在生长过程中掺入等电子杂质In作为表面活性剂,分别在Si衬底和3CSiCSi衬底上生长出高质量的具有纤锌矿结构的单晶GaN纳米线和纳米尖三棱锥.所得产物通过场发射扫描电子显微镜、高分辨透射电子显微镜、能量色散x射线谱仪、x射线衍射仪,和荧光谱仪进行表征.这里所用的生长方法新颖,生长出的GaN纳米尖三棱锥在场发射和激光方面有潜在的应用价值.A two-hot-boat chemical vapor deposition system was modified from a thermal evaporation equipment. This system has the advantage of high vacuum, rapid heating rate and temperature separately controlled boats for the source and samples. These are in favor of synthesizing compound semiconducting nano-materials. By the system, we have synthesized high-quality wurtzite single crystal GaN nanowires and nanotip triangle pyramids via an in-situ doping indium surfactant technique on Si and 3C-SiC epilayer/Si substmtes. The products were analyzed by x-ray diffraction, field emission scanning electron microscopy, high- resolution transmission electron microscopy, energy-dispersive x-ray spectroscopy, and photoluminescence measurements. The GaN nanotip triangle pyramids, synthesized with this novel method, have potential application in electronic/ photonic devices for field-emission and laser.

关 键 词：GaN 纳米结构 透射电子显微镜 光致荧光谱 化学气相沉积系统 GAN纳米线 生长系统 In 高分辨透射电子显微镜 半导体纳米材料 扫描电子显微镜 技术 X射线衍射仪 

分 类 号：TB383[一般工业技术—材料科学与工程]