带隙法测定SiGe/Si材料的应变状态  

A method to estimate the strain state of SiGe/Si by measuring the bandgap

作　　者：成步文[1] 姚飞[1] 薛春来[1] 张建国[1] 李传波[1] 毛容伟[1] 左玉华[1] 罗丽萍[1] 王启明[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《物理学报》2005年第9期4350-4353,共4页Acta Physica Sinica

基　　金：国家高技术研究发展计划(批准号:2002AA312010);国家重点基础研究发展规划(批准号:G2000036603);国家自然科学基金(批准号:60336010)资助的课题.~~

摘　　要：从固体模型理论的结果出发,计算了生长于Si(100)衬底上x值小于0.85的Si1-xGex合金材料(能带结构为类Si结构)的间接带隙与应变的关系,结果表明,应变的SiGe材料的带隙和完全弛豫状态下材料的带隙之差与应变呈线性关系.基于这一结果,提出了用测量带隙来间接测定SiGeSi应变状态的方法.用带隙法和x射线双晶衍射法测量了不同应变状态下的SiGeSi多量子阱材料的应变弛豫度,两者可以较好的符合,表明带隙法测量SiGe应变弛豫度是可行的.Using the result of model-solid theory, we have obtained the relationship between bandgap and strain of Si1-xGex alloy on Si （100） substrate with x 〈 0.85. It was shown that the deviation between the bandgap of strained SiGe and relaxed SiGe is proportional to the strain. According to the theoretical result, a novel method was suggested to determine the strain state of SiGe/ Si through measuring the bandgap. The strain in the SiGe/Si multi-quantum wells was measured using the new method and the results had good agreement with that from XRD measurement.

关 键 词：SIGE合金 应变 带隙 SIGE/SI 合金材料 间接测定 带隙 SI1-XGEX x射线双晶衍射法 SI(100) 应变弛豫 

分 类 号：TN304[电子电信—物理电子学]