GaSb衬底上外延InAs_xSb_(1-x)材料的LP-MOCVD研究  

The Study of InAs_xSb_(1-x) on GaSb Substrate Grown by LP-MOCVD

作　　者：李晓婷[1] 王一丁[2] 汪韬[1] 殷景致[2] 王警卫[1] 赛小锋[1] 高鸿楷[1] 张志勇[3] 

机构地区：[1]中国科学院西安光学精密机械研究所光电子学室 [2]吉林大学电子工程学院,长春130023 [3]西北大学电子工程系,西安710069

出　　处：《光子学报》2005年第9期1363-1366,共4页Acta Photonica Sinica

基　　金：国家863计划(NO:2002AA313080);国家自然科学基金(NO:60378020)资助项目

摘　　要：采用自制的低压金属有机化学汽相淀积LP-MOCVD设备,在(100)面GaSb单晶衬底上外延生长了InAsSb材料.用X射线双晶衍射、光学显微镜和扫描电镜、电子探针能谱仪等对材料特性进行了表征,分析研究了生长温度、Ⅴ/Ⅲ比、过渡层等对外延层的影响.并且获得了与GaSb衬底晶格失配度较低的表面光亮的晶体质量较好的InAsSb外延层.InAsSb epitaxy had been obtained on （100） GaSb substrate by a home-made low pressure MOCVD system. The characteristic of InAsSb epitaxy was investigated by means of x-ray diffraction technique,optical microscopy and scanning electron microscopy（SEM）, and electron microprobe analysis （SEM）. And the dependence of surface morphology and solid composition of epitaxy on growth temperature, Ⅴ/Ⅲ ratio and buffer layer is studied. High quality mirror-like surfaces with a minimum lattice mismatch was obtained.

关 键 词：LP-MOCVD GASB INASSB 生长温度 

分 类 号：O484.1[理学—固体物理]