表面电场整形高压RESURF　LDMOST  

A Surface Field Shaping High-Voltage RESURF LDMOS Transistor

作　　者：熊平[1] 卢豫曾[1] 

机构地区：[1]电子科技大学微电子所

出　　处：《微电子学》1996年第4期221-225,共5页Microelectronics

摘　　要：提出了采用对ＬＤＭＯＳ漂移区表面进行分段离子注入，对表面电场进行整形的一种新结构高压ＲＥＳＵＲＦＬＤＭＯＳＴ。利用二维数值模拟对这种器件结构的分析表明，这种新结构显著降低了表面电场峰值，降低了采用ＲＥＳＵＲＦ技术导致的耐压对工艺参数变化的敏感性，并在耐压不降低的情况下可缩短器件漂移区长度，得到低的比导通电阻Ｒｏｎ·Ａ。A new structure of high-voltage RESURF LDMOS transistor is proposed, for which multiple ion implantations into segragated surfaces of the drift region in LDMOST have been used to shape the surface field. Analysis of the device structure by two-dimensional numerical simulation shows that the novel structure significantly lowers the surface field peak and reduces the sensitivity of breakdown voltage to the variations in process parameters caused by the use of RESURF technique. It is also demonstrated that shorter drift region could be used for the device without reducing the breakdown voltage,and a love specific on-resistance Ron·A is obtained.

关 键 词：半导体器件 功率器件 LDMOST 高压器件 RESURF 

分 类 号：TN303[电子电信—物理电子学]