多晶硅太阳电池的氮化硅薄膜性能研究  

The Characteriztion of Silicon Niteride (SiN) Thin Films on Multi-crystalline Solar Cells

作　　者：勾宪芳[1] 许颖[2] 任丙彦[1] 马丽芬[1] 

机构地区：[1]河北工业大学信息功能材料研究所,天津300130 [2]北京市太阳能研究所,北京100083

出　　处：《河北工业大学学报》2005年第5期27-30,共4页Journal of Hebei University of Technology

基　　金：北京市科技新星计划(H020821480130)

摘　　要：用等离子体化学气相沉积(PECVD)法,通过改变[SiH4∶N2]/[NH3]的流量比沉积SiN薄膜.用椭圆偏振仪、准稳态光电导衰减法(QSSPCD)、X射线光电子能谱(XPS)、红外吸收光谱(IR)、反射谱,测试氮化硅薄膜的厚度、折射率、少子寿命、Si/N、氢含量、反射率.研究了多晶硅太阳电池沉积氮化硅薄膜的性能,结果发现:沉积温度350℃,沉积时间5min,[SiH4∶N2]/[NH3]=4∶1时,沉积氮化硅硅片寿命高、氢含量高钝化效果好、反射率低.In order to study the characterization of SiN thin films on multi-crystalline solar cells, silicon nitride films were deposited by means of the plasma chemical vapor deposition （PECVD） with difference flux of SiH4 and NH3 in the paper. The characterization of SiN thin films was studied by spectral ellipsometry, infrared absorption spectroscopy （IR）, X-ray Photoelectric Spectroscopy （XPS）, quasi-steady state photoconductor decay （QSSPCD） measurements and reflection spectra etc, The results show that the best condition to form SiN thin films is deposition temperature at 350℃ for 5min, the Si wafer with satisfied minor carriers lifetime and low reflectivity when the ratio of [SiH4：N2] / [NH3] equal to 4： 1.

关 键 词：多晶硅 太阳电池 等离子体化学气相沉积 氮化硅 少子寿命 

分 类 号：TK512[动力工程及工程热物理—热能工程]